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Ivan Sanchez Esqueda

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Asst Professor
Faculty, TEMPE Campus, Mailcode 5706
Biography: 

Ivan Sanchez Esqueda is an assistant professor at the School of Electrical, Computer and Energy Engineering. He received his doctorate from Arizona State University in 2011 for his work on ionizing radiation effects in advanced CMOS technologies. After obtaining his doctoral degree, he spent eight years as a senior electrical engineer and research lead at the University of Southern California, where he led programs on carbon-based nanoelectronics, reliability physics of nanoscale transistors and emerging nanotechnologies for novel computing architectures. 

Education: 
  • Ph.D. Electrical Engineering, Arizona State University 2011
  • M.Sc. Electrical Engineering, Arizona State University 2006
  • B.Sc. Electrical Engineering, University of Arizona 2004 
Research Interests: 

Ivan's research interests include nanoelectronics, two-dimensional (2-D) and one-dimensional (1-D) materials, device nanofabrication, characterization, analysis, and modeling. The exploration of new device functionalities for novel computing, sensing, and memory applications, such as the hardware implementation of neuromorphic computing and machine learning. His reserach focus includes the fundamental understanding of nanoscale electronics, confinement and scattering effects in low-dimensional electronic systems, computational nanoelectronics and modeling of semiconductor devices. Defect-related mechanisms and their impact on performance, variability, and reliability of devices and circuits. Modeling and characterization of radiation and aging effects (i.e., wear out) in state-of-the-art commercial CMOS and on emerging nanotechnologies.

Publications: 

2019: 

  • I. P. Livingston, I. S. Esqueda, H. J. Barnaby, "Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations," Solid-State Electronics, vol. 160, 107609, 2019.

2018:

  • X. Yan, H. Wang, I. S. Esqueda, "Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors," Nano Letters, vol. 19, no. 1, pp. 482-487, 2018.​
  • D. Sarkar, I. S. Esqueda, R. Kapadia, “Nanowire Field-Effect Transistors,” in Advanced Nanoelectronics: Post-Silicon Materials and Devices, John Wiley and Sons, 2018.
  • I. S. Esqueda, H. Zhao, H. Wang, "Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses," Journal of Applied Physics, vol. 124, no. 15, pp. 152133, 2018. (Featured Article).
  • X. Yan, H. Wang, H. Barnaby, and I. S. Esqueda, "Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures," IEEE Trans. on Dev. and Mater. Reliab., vol. 13, no. 3, pp. 456-462, 2018.
  • I. S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang, C. Zhou, “Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing,” ACS Nano, vol. 12, no. 7, pp. 7352-7361, 2018.
  • R. Fang, I. Livingston, I. S. Esqueda, M. Kozicki, H. Barnaby, “Bias temperature instability model using dynamic defect potential for predicting CMOS aging,” Journal of Applied Physics, vol. 123, no. 22, pp. 225701, 2018.
  • X. Yan, I. S. Esqueda, J. Ma, J. Tice, and H. Wang, “High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure,” Appl. Phys. Lett., vol. 112, no. 3, 032101, 2018. (Editor's Pick)

2017:

  • I. S. Esqueda, H. Tian, X. Yan, H. Wang, “Transport properties and device prospects of ultra-thin black phosphorus on hexagonal boron nitride,” IEEE Trans. Elec. Dev., vol. 64, no. 12, pp. 5163-5171, Dec 2017.
  • I. S. Esqueda, “Confinement effects on radiation hardness of SOI FinFETs at the scaling limit,” IEEE Electron Device Letters, vol. 38, no. 3, pp. 306-309, 2017.

2016:

  • I. S. Esqueda and H. J. Barnaby, “Surface-Potential-Based Compact Modeling of BTI,” Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, pp. XT-06-1-XT-06-6, April 2016.

2015:

  • I. S. Esqueda and C. D. Cress, “Modeling Radiation-Induced Scattering in Graphene,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2906-9113, 2015.
  • P. C. Adell, B. Rax, I. S. Esqueda, and H. J. Barnaby, “Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2476-2481, 2015.
  • I. S. Esqueda, H. J. Barnaby, M. P. King, “Compact modeling of total ionizing dose and aging effects in MOS technologies,” IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1501-1515, 2015.
  • I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che and C. Zhou, “The impact of defect scattering on the quasi-Ballistic transport of nanoscale conductors,” Journal of Applied Physics, 117, 084319, 2015.
  • I. S. Esqueda, “The impact of stress-induced defects on MOS electrostatics and short-channel effects,” Journal of Solid State Electronics, 103, pp. 167-172, 2015.

2014:

  • I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao and C. Zhou, “Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure,” Journal of Applied Physics, 115, 054506, 2014.
  • I. S. Esqueda and H. J. Barnaby, “A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits,” Journal of Solid State Electronics, 91, pp. 81-86, 2014.
  • Y. Cao, J. Velamala, K. Sutaria, M. Chen, J. Ahlbin, I. S. Esqueda, M. Bajura, M. Fritze, “Cross-layer modeling and simulation of circuit reliability,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 33, no. 1, pp. 8-23, 2014.

2013:

  • I. S. Esqueda, C. D. Cress, T. J. Anderson, J. R. Ahlbin, M. Bajura, M. Fritze and J. S. Moon, “Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs),” Electronics, no. 2, pp. 234-245, 2013.
  • I. S. Esqueda and H. J. Barnaby, “Defect-based compact model for circuit reliability simulation in advanced CMOS technologies,” IEEE International Integrated Reliability Workshop (IIRW) Conference Proceedings, pp. 45-49, 2013.
  • M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. Barnaby, I. S. Esqueda, “Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application,” Journal of Non-Crystalline Solids, vol. 377, no. 1, pp. 195-199, 2013.

2012:

  • P. C. Adell, I. S. Esqueda, H. J. Barnaby, B. Rax and A. H. Johnston, “Impact of Low Temperatures (<125 K) on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3081-3086, 2012.
  • C. D. Cress, J. G. Champlain, I. S. Esqueda, J. T. Robinson, A. L. Friedman and J. J. McMorrow, “Total ionizing dose induced charge carrier scattering in graphene devices,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3045-3053, 2012.
  • I. S. Esqueda and H. J. Barnaby, “Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 723-727, 2012.
  • I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 701-706, 2012.
  • I. S. Esqueda, Y. Fu, C. D. Cress, J. Zhang, C. Zhou, J. Ahlbin, M. Bajura, G. Boverman and M. Fritze, “Modeling the effect of hysteresis on aligned nanotube FETs exposed to ionizing radiation,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2012.

2011:

  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, “Modeling Inter-device Leakage in 90 nm Bulk CMOS Devices,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 793-799, 2011.
  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” IEEE Trans. Nucl. Sci., vol. 58, No. 2, pp. 499-505, 2011.
  • I. S. Esqueda, H. J. Barnaby, P. C. Adell, B. G. Rax, H. P. Hjalmarson, M. L. McLain and R. L. Pease, “Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 2945-2952, 2011.
  • I. S. Esqueda and H. J. Barnaby, “Modeling the non-uniform distribution of radiation-induced interface traps,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 15-19, 2011.
  • I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 1-6, 2011.
  • P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. S. Esqueda and H. J. Barnaby, “Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing,” IEEE Workshop on Microelectronics and Electron Devices, pp. 1-4, 2011.

2010:

  • G. J. Schlenvogt, H. J. Barnaby, I. S. Esqueda, K. E. Holbert, J. Wilkinson, S. Morrison, L. Tyler, “Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit,” IEEE Trans. Nucl. Sci., vol.57, no.6, pp.3609-3614, 2010.

2009:

  • I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf and W. Xiong, “Modeling the Radiation Response of Fully-Depleted SOI n-channel MOSFETs,” IEEE Trans. Nucl. Sci., vol. 56, pp. 2247-2250, 2009.
  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 2-6, 2009.
  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Trans. Circuits and Systems, vol. 56, no. 8 pp. 1870-1882, 2009.
  • M. L. McLain, H. J. Barnaby, I. S. Esqueda, J. Oder and B. Vermeire, “Reliability of High Performance Standard Two-Edge and Radiation Hardened by Design Enclosed Geometry Transistors.” Proceedings of the 47th IEEE Annual International Reliability Physics Symposium (IRPS), pp. 174-179, 2009.

2008:

  • F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell, I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, W. Xiong, “Gate-Length and Drain-Bias Dependence of Band-to-Band tunneling induced Drain Leakage in Irradiated Fully Depleted SOI devices,” IEEE Trans. Nucl. Sci., vol. 55, pp. 3259-3264, 2008.
  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Custom Integrated Circuits Conference (CICC), pp. 273 – 280, 2008.

< 2008:

  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, “Total-ionizing-dose effects on isolation oxides in modern CMOS technologies,” Nuclear Instruments and Methods in Physics Research B 261, pp. 1142–1145, 2007.
  • I. S. Esqueda, H. J. Barnaby, and M. L. Alles, “Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies,” IEEE Trans. Nucl. Sci., vol. 52, pp. 2259-2264, 2005.
  • M. L. McLain, M. Campola, I. S. Esqueda and H. J. Barnaby, “Modeling Dog Bone Gate Geometry n-Channel MOSFETs,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2005.
  • E. H. Minson, I. S. Esqueda, H. J. Barnaby, R. L. Pease, D. G. Platter and G. Dunham, “Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides,” IEEE Trans. Nucl. Sci., vol. 51, pp. 3723-3729, 2004.