Ignatius Tsong

Ignatius Tsong

Emeritus Professor, Department of Physics
  • ig.tsong@asu.edu
  • 480-965-3563
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  • PSB 249 TEMPE, AZ 85287-1504
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Biography Research Teaching Public Work
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Publications
  • A.H. Blake, D. Caselli, C. Durot, J. Mueller, E. Parra, J. Gilgen, A. Boley, D.J. Smith, I.S.T. Tsong, J.C. Roberts, E. Piner, K. Linthicum, J.W. Cook, D.D. Koleske, M.H. Crawford, A.J. Fischer. InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers. Journal of Applied Physics (2012).
  • C Poweleit, C-W Hu, J Tolle, J Kouvetakis, Ignatius Tsong. Optical characterization of Si1-xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers. Journal of Applied Physics (2007).
  • A Chizmeshya, C Hu, C Ritter, J Kouvetakis, J Tolle, J Tice, R Nieman, Ignatius Tsong. Synthesis of butane-like SiGe hydrides: Enabling precursors for CVD of Ge-rich semiconductors. Journal of American Chemical Society (2006).
  • A Chizmeshya, C Hu, J Kouvetakis, J Menendez, J Tolle, V D'Costa, Y Fang, Ignatius Tsong. Low temperature chemical vapor deposition of Si-based compounds via SiH(3)SiH(2)SiH(3): Metastable SiSn/GeSn/Si(100) heteroepitaxy structures. Applied Physics Letters (2006).
  • Z Wang, Y Yamada-Takamura, Y Fujikawa, Q Xue, J Tolle, J Kouvetakis, Ignatius Tsong, T Sakurai. Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular beam epitaxy. Journal of Applied Physics (2006).
  • C-W Hu, Ignatius Tsong, V D'Costa, J Menendez, P Crozier, J Tolle, J Kouvetakis. Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)(4-n)SiH(n) hydrides. Applied Physics Letters (2005).
  • C-W Hu, J Menendez, Ignatius Tsong, J Tolle, A Chizmeshya, C Ritter, J Kouvetakis. Low-temperature pathways to Ge-rich Si(1-x)Ge(x) alloys via single-source hydride chemistry. Applied Physics Letters (2005).
  • H Hibino, Y Watanabe, C-W Hu, Ignatius Tsong. Thermal decay of superheated 7x7 islands and supercooled "1x1" vacancy islands on Si(111). Physical Review B (2005).
  • J Tolle, J Kouvetakis, D-W Kim, S Mahajan, A Chizmeshya, C-W Hu, A Bell, F Ponce, Ignatius Tsong. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications: A review. Chinese Journal of Physics (2005).
  • P-L Liu, A Chizmeshya, J Kouvetakis, Ignatius Tsong. First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001). Physical Review B (2005).
  • R Roucka, J Tolle, Andrew Chizmeshya, Ignatius Tsong, John Kouvetakis. Epitaxial film growth of zirconium diboride on Si(001). Journal of Crystal Growth (2005).
  • R Trivedi, J Tolle, Andrew Chizmeshya, R Roucka, Cole Ritter, John Kouvetakis, Ignatius Tsong. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation. Applied Physics Letters (2005).
  • Rahul Trivedi, Po-Liang Liu, Radek Roucka, John Tolle, Andrew Chizmeshya, Ignatius Tsong, John Kouvetakis. Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB2 Templates. Chemistry of Materials (2005).
  • Z Wang, Ignatius Tsong, Y Yamada-Takamura, Y Fujikawa, T Sakurai, Q Xue, J Tolle, P Liu, A Chizmeshya, John Kouvetakis. Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. Physical Review Letters (2005).
  • C Hu, A Chizmeshya, J Tolle, John Kouvetakis, Ignatius Tsong. Nucleation and growth of epitaxial ZrB2(0001) on Si(111). Journal of Crystal Growth (2004).
  • H Hibino, Y Homma, C Hu, M Uwaha, T Ogino, Ignatius Tsong. Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy. Applied Surface Science (2004).
  • J Tolle, J Kouvetakis, D Kim, S Mahajan, A Bell, F Ponce, Ignatius Tsong, M Kottke, Z Chen. Epitaxial growth of Al(x)Ga(1-x)N on Si(111) via a ZrB2(0001) buffer layer. Applied Physics Letters (2004).
  • C Hu, A Bell, L Shi, F Ponce, D Smith, Ignatius Tsong. Structural and optical properties of coherent GaN layers grown on 6H-SiC(0001)-(rt3xrt3). Applied Physics Letters (2003).
  • C Hu, J Taraci, J Tolle, M Bauer, Peter Crozier, Ignatius Tsong, J Kouvetakis. Synthesis of Highly Coherent SiGe and Si4Ge Nanostructures by Molecular Beam Epitaxy of H3SiGeH3 and Ge(SiH3)4. Chemistry of Materials (2003).
  • J Tolle, R Roucka, Ignatius Tsong, Andrew Chizmeshya, John Kouvetakis. Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer. Applied Physics Letters (2003).
  • L Torrison, J Tolle, Ignatius Tsong, J Kouvetakis. Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy. Thin Solid Films (2003).
  • L Torrison, J Tolle, J Kouvetakis, S Dey, D Gu, Ignatius Tsong, P Crozier. Stoichiometric and non-stoichiometric films in the Si-O-N system: mechanical, electrical and dielectric properties. Materials Science and Engineering B (2003).
  • R Roucka, J Tolle, Andrew Chizmeshya, P Crozier, C Poweleit, D Smith, J Kouvetakis, Ignatius Tsong. Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN. Applied Surface Science (2003).
  • A Bell, C Hu, F Ponce, Ignatius Tsong, David Smith. Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism. Appl. Phys. Lett (2002).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. A study of mass transport on Si(111) surfaces by low-energy electron microscopy. J. Surf. Sci. Soc. Jpn (2002).
  • J Tolle, R Roucka, A Chizmeshya, P Crozier, D Smith, Ignatius Tsong, J Kouvetakis. Novel synthetic pathways to wide band gap semiconductors in the Si-C-Al-N system. Solid State Sci (2002).
  • J Tolle, R Roucka, P Crozier, Andrew Chizmeshya, Ignatius Tsong, J Kouvetakis. Growth of SiCAlN on Si(111) via a crystalline oxide interface. Appl. Phys. Lett (2002).
  • M Tsai, O Sankey, Kevin Schmidt, Ignatius Tsong. Electronic Structures of Polar and Nonpolar GaN Surfaces. Mat. Sci. Eng. B (2002).
  • R Roucka, J Tolle, A Chizmeshya, P Crozier, Christian Poweleit, D Smith, Ignatius Tsong, J Kouvetakis. Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN. Phys. Rev. Lett (2002).
  • C Hu, H Hibino, J Kouvetakis, J Nielsen, J Pelz, Ignatius Tsong. Controlled striped phase formation on ultra-flat Si(001) surfaces during diborane exposure. Appl. Phys. Lett (2001).
  • C Hu, H Hibino, J Nielsen, J Pelz, Ignatius Tsong. Enhanced terrace stability for preparation of step-free Si(001)-(2x1) surfaces. Phys. Rev. Lett (2001).
  • C Hu, H Hibino, T Ogino, Ignatius Tsong. Hysteresis in the (1x1)-(7x7) first-order phase transition on the Si(111) surface. Surface Sci (2001).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. Decay kinetics of two-dimensional islands and holes on Si (111) studied by low-energy electron microscopy. Phys. Rev. B (2001).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. Diffusion barrier caused by (1x1)-(7x7) on Si(111) during phase transition. Phys. Rev. B (2001).
  • Q Xue, Q Xue, S Kuwano, K Nakayama, T Sakurai, Ignatius Tsong, X Qiu, Y Segawa. Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC. J. Cryst. Growth (2001).
  • R Roucka, J Tolle, D Smith, Peter Crozier, Ignatius Tsong, J Kouvetakis. Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates. Appl. Phys. Lett (2001).
  • C Hu, D Smith, R Doak, Ignatius Tsong. Morphological Control of GaN Buffer Layers Grown by Molecular Beam Epitaxy on 6H-SiC (0001). Surf. Rev. Lett (2000).
  • D Jordan, Ignatius Tsong, D Smith, B Wilkens, R Doak. III-N Semiconductor Growth with Activated Nitrogen: a State-Specific Study of A3 Metastable N2 Molecules. Appl. Phys. Lett (2000).
  • J Stirman, F Ponce, A Pavlovska, Ignatius Tsong, D Smith. Polarity Determination and Atomic Arrangements at a GaN/SiC Interface using High-resolution Image Matching. Appl. Phys. Lett (2000).
  • M Chirita, H Xia, R Sooryakuma, J Tolle, V Torres, B Wilkens, D Smith, J Kouvetakis, Ignatius Tsong. Elastic Properties of Nano-crystalline Zirconium-silicon-boron Thin Films. J. Appl. Phys (2000).
  • Q Xue, Q Xue, S Kuwano, T Sakurai, T Ohno, Ignatius Tsong, X Qiu, Y Segawa. Imaging wurtzite GaN surfaces by molecular beam epitaxy - scanning tunneling microscopy. Thin Solid Films (2000).
  • S Hearne, J Han, S Lee, J Floro, D Follstaedt, E Chason, Ignatius Tsong. Brittle-ductile Relaxation Kinetics of Strained AlGaN/GaN Heterostructures. Appl. Phys. Lett (2000).
  • Torres, V M (Author) ,Jordan, D C (Author) ,Tsong, Ignatius Siu Tung (Author) ,Doak, R B (Author) . Supersonic beam epitaxy of wide bandgap semiconductors. Atomic and Molecular Beams - The State of the Art 2000 (2000).
Research Activity
  • Tsong,Ignatius Siu Tung*, Kouvetakis,John. Gallium Nitride Quantum-Dot Light-Emitting Diodes. NSF-ENG-EEC(1/16/2006 - 3/31/2009).
  • Kouvetakis,John*, Chizmeshya,Andrew V, Mahajan,Subhash, Menendez,Jose, Tsong,Ignatius Siu Tung. Acquisition of a Multipurpose High Resolution X-ray Diffraction User Facility for Materials Research & Education. NSF-MPS-DMR(10/17/2005 - 4/30/2007).
  • Kouvetakis,John*, Tsong,Ignatius Siu Tung. SYNTHESIS, CHARACTERIZATION, PROPERTIES AND PERFORMANCE OF NOVEL DIRECT BAND GAP SEMICONDUCTORS. DOD-ARMY-ARO(7/15/2004 - 10/14/2005).
  • Kouvetakis,John*, Tsong,Ignatius Siu Tung. NER:Synthesis of nanoscale structures of new direct bandgap semiconductors. NSF-ENG(9/1/2003 - 8/31/2005).
  • Kouvetakis,John*, Menendez,Jose, Ponce,Fernando Agustin, Tsong,Ignatius Siu Tung. ACQUISITION OF AN INFRARED ELLIPSOMETER FOR MATERIALS RESEARCH AND STUDENT TRAINING. NSF-MPS(8/15/2003 - 1/31/2005).
  • Tsong,Ignatius Siu Tung. PROPERTIES OF PSEUDO-BINARY WIDE BAND GAP SEMICONDUCTOR SILICON CARBIDE-ALUMINUM NITRIDE. NSF-MPS(5/1/2003 - 10/31/2006).
  • Kouvetakis,John*, Tsong,Ignatius Siu Tung. A HIGH-RESOLUTION ULTRAHIGH VACUUM SCANNING ELECTRON MICROSCOPE FITTED TO A MOLECULAR BEAM EPITAXY CHAMBER (UHV-SEM-MBE). DOD-ARMY-ARO(5/1/2002 - 10/31/2003).
  • Kouvetakis,John*, Tsong,Ignatius Siu Tung. SYNTHESIS & CHARACTERIZATION ON SUPERHARD FILMS & COATINGS BASED ON LIGHT ELEMENTS. DOD-ARMY-ARO(9/15/2000 - 9/14/2003).
  • Tsong,Ignatius Siu Tung. US - JAPAN SEMINAR ON MESOSCOPIC PHENOMENA ON SURFACES. NSF-SBE(6/15/2000 - 5/31/2001).
  • Tsong,Ignatius Siu Tung. TAILORING SURFACE MORPHOLOGY IN GROUP III NITRIDE HETEROEPITAXY. NSF-MPS(2/1/2000 - 1/31/2004).
  • Tsong,Ignatius Siu Tung. SKION PROPOSAL TO BMDO. SKION CORP(5/8/1998 - 5/7/1999).
  • Tsong,Ignatius Siu Tung. SELECTED ENERGY EPITAXIAL DEPOSITION (SEED) & LOW ENERGY ELECTRON MICROSCOPY (LEEM) OF GAN AND ALN THIN FILMS--DURIP. NORTH CAROLINA STATE UNIV(3/2/1998 - 3/1/1999).
  • Tsong,Ignatius Siu Tung. APPLICATION OF A MAGNETIC LEVITATED VIBRATION ISOLATION PLATFORM FOR SCANNIN TUNNELING MICROSCOPY. DOD-ARMY-ARO(6/1/1997 - 5/31/2000).
  • Tsong,Ignatius Siu Tung. TWELVE-MONTH LONG TERM VISIT. NSF-SBE(3/15/1997 - 5/31/1999).
  • Sankey,Otto F*, Bennett,Peter A, Bird,Jonathan, Drucker,Jeffery S, Ferry,David K, Gust,John Devens, Herbots,Nicole, Lindsay,Stuart, Mahajan,Subhash, Marzke,Robert F, Moore,Ana L, Moore,Thomas Andrew, Petuskey,William T, Skromme,Brian John, Smith,David John, Tsong,Ignatius Siu Tung, Wolf,George H. MATERIALS RESEARCH SCIENCE & ENGINEERING CENTER (MRSEC). NSF-MPS(9/1/1996 - 2/28/2003).
  • Tsong,Ignatius Siu Tung*, Kouvetakis,John. IN SITU MONITORING & CHARACTERIZATION OF SUPERHARD THIN-FILM GROWTH UNDER NON-EQUILBRIUM CONDITIONS. DOD-ARMY-ARO(6/7/1996 - 10/6/2000).
  • Tsong,Ignatius Siu Tung*, Kouvetakis,John. EQUIPMENT FOR IN SITU CHARACTERIZATION OF THIN-FILM SYNTHESIS BY CVD. DOD-ARMY(6/1/1996 - 5/31/1998).
  • Tsong,Ignatius Siu Tung. TAILORING SURFACE MORPHOLOGY OF EPITAXIAL LAYERS ON SILICON. NSF-MPS(1/1/1996 - 12/31/2001).
  • Tsong,Ignatius Siu Tung. EQUIPMENT FOR SELECTED ENERGY EPITAXIAL DEPOSITION (SEED). DOD-NAVY-ONR(2/1/1995 - 4/30/1996).
  • Tsong,Ignatius Siu Tung*, Bauer,Ernst Georg, Doak,R Bruce, Schmidt,Kevin Edward. SELECTED ENERGY EPITAXIAL DEPOSITION. NORTH CAROLINA STATE UNIV(11/1/1994 - 10/31/1999).
  • Tsong,Ignatius Siu Tung. REAL-TIME LEEM STUDIES. DOD-NAVY(2/1/1994 - 2/28/1995).
  • Tsong,Ignatius Siu Tung. DESIGN CONSTRUCTION AND TESTS OF A NOVEL SCANNING TUNNELIN. DOD-ARMY(6/1/1993 - 5/31/1996).
  • Mayer,James Walter*, Alford,Terry Lynn, Bennett,Peter A, Burrows,Veronica Ann, Cale,Timothy S, Carpenter,Ray W, Culbertson,Robert John, Ferry,David K, Glaunsinger,William, Herbots,Nicole, Kouvetakis,John, Kozicki,Michael N, Krause,Stephen, Mckelvy,Michael J, Menendez,Jose, Pizziconi,Vincent B, Ramakrishna,B L, Reed,Helen Louise, Sieradzki,Karl, Smith,David John, Tsong,Ignatius Siu Tung. UNDERGRAD MATERIALS EDUCATION INITIATIVE. NSF-MPS(10/15/1992 - 3/31/1997).
  • Tsong,Ignatius Siu Tung. STM CONTROLLER FABRICATION. (7/13/1992 - 11/20/1992).
  • Tsong,Ignatius Siu Tung. STM ELECTRONICS AND CONTROL UNIT. UNIV OF MARYLAND(7/9/1992 - 8/31/1993).
  • Tsong,Ignatius Siu Tung. SCAN. TUNN. MICROSCOPY & SPECTRO. OF MET/CER BOND. MECHANISM. DOD-ARMY(3/10/1992 - 3/9/1996).
  • Tsong,Ignatius Siu Tung. STRUC OF SURFACES & INTERFACES OF METAL/SEMICONDUCTOR SYS. NSF-MPS(3/1/1992 - 2/28/1996).
  • Tsong,Ignatius Siu Tung. ACQUISITION OF A LOW ENERGY ELECTRON MICROSCOPE. NSF(9/15/1991 - 8/31/1994).
  • Tsong,Ignatius Siu Tung. GRADUATE STUDENT SUPPORT. BURLEIGH INSTRUMENTS, INC(5/15/1989 - 11/15/1990).
  • Tsong,Ignatius Siu Tung. EXPR & THEOR STDS OF ULTRATHIN OVERLAYERS ON SEMICONDUCTOR. NSF(8/16/1988 - 7/31/1992).
  • Tsong,Ignatius Siu Tung. SURFACE STRUCTRS & SURFACE PROCSS OF CERAMICS W/ATOMIC RESOL. DOD-ARMY(6/1/1988 - 9/30/1991).
  • Tsong,Ignatius Siu Tung. LONG-TERM EXCHANGE OF ADVANCED RESEARCHERS-S. TEPLOV. IREX(9/1/1987 - 5/31/1988).
Presentations
  • Ignatius Tsong. InGaN multiple quantum well light-emitting diodes grown on Si(111) substrates. Symposium on Surface and Nano Science 2011 (Jan 2011).
  • P.A. Crozier, C.D. Poweleit, and I.S.T. Tsong. Microstructure and Photoluminescence of Si(1-x)Ge(x) Nanodots. Symposium on Surface and Nano Science 2008 (Jan 2008).
  • Tsong, Ignatius. Growth of Group III-Nitrides on Silicon. Utah State University colloquium (Oct 2007).
  • Tsong, Ignatius. Optical Studies of Si(1-x)Ge(x) Nanodots. Symposium on Surface Science 2007 (Mar 2007).
  • Tsong, Ignatius. Optical Studies of Si(1-x)Ge(x) Nanodots. Symposium on Surface abd Nano Science 2007 (Jan 2007).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Symposium on Surface Science 2006 (Mar 2006).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Surface Physics 2006 (SSP'06) (Jan 2006).
  • Tsong, Ignatius. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications. Workshop on Challenges in Multifunctional Material Stoichiometry (Jul 2005).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for III-nitride applications. $th International Workshop on Surfaces (May 2005).
  • Tsong, Ignatius. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications. 2005 RCIQE International Seminar for 21st Century COE Program (Feb 2005).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for group III nitride applications. IFCAM Forum on Electronic Properties of Interfaces and Contacts (Nov 2004).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for group III nitride applications. Sixth Taipei Symposium on Surfaces, Thin Films and Nano Sciences, Academia Sinica (Aug 2004).
  • Tsong, Ignatius. Growth of AlGaN on silicon substrates for microelectronic and optoelectronic applications. Approaches to Combat Terrorism Principal Investigator Workshop, National Science Foundation (Jun 2004).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Nano Factory International Symposium, Meijo University (May 2004).
  • Tsong, Ignatius. Nucleation and growth of ZrB2(0001) on Si(111). Symposium on Surface Science (Feb 2004).
  • Tsong, Ignatius. Characterization of ZrB2(0001) heteroepitaxy on Si(111) for III-nitride applications. 5th International Symposium on Atomic Level Characterizations of New Materials
  • Tsong, Ignatius. Epitaxial film growth of hexagonal zirconium diboride on Si(001). Symposium for Surface Physics
Service
  • Space Committee, Member (2010 - 2011)
  • Committee on Committies, Chair (2009 - 2011)
  • Committee on Committies, Member (2009 - 2011)
  • Computer Committee, Chair (2007 - 2008)
  • Graduate Exam Committee, Member (2007 - 2008)
  • Graduate Exam Committee, Member (2005 - 2007)
  • Graduate Program Committee, Member (2005 - 2007)
  • School of Materials Implementation Committee, Member (2005 - 2006)
  • Space Committee, Member (2003 - 2004)
  • The Encyclopedia of Materials, Eisevier, Subject Editor (1998 - 2001)
  • US-Japan Seminar on Mesoscopic Phenomena on Surfaces, Chairman (2000 - 2000)
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