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Ignatius Tsong

Emeritus Professor
Faculty,
Publications
  • A.H. Blake, D. Caselli, C. Durot, J. Mueller, E. Parra, J. Gilgen, A. Boley, D.J. Smith, I.S.T. Tsong, J.C. Roberts, E. Piner, K. Linthicum, J.W. Cook, D.D. Koleske, M.H. Crawford, A.J. Fischer. InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers. Journal of Applied Physics (2012).
  • C Poweleit, C-W Hu, J Tolle, J Kouvetakis, Ignatius Tsong. Optical characterization of Si1-xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers. Journal of Applied Physics (2007).
  • A Chizmeshya, C Hu, C Ritter, J Kouvetakis, J Tolle, J Tice, R Nieman, Ignatius Tsong. Synthesis of butane-like SiGe hydrides: Enabling precursors for CVD of Ge-rich semiconductors. Journal of American Chemical Society (2006).
  • A Chizmeshya, C Hu, J Kouvetakis, J Menendez, J Tolle, V D'Costa, Y Fang, Ignatius Tsong. Low temperature chemical vapor deposition of Si-based compounds via SiH(3)SiH(2)SiH(3): Metastable SiSn/GeSn/Si(100) heteroepitaxy structures. Applied Physics Letters (2006).
  • Z Wang, Y Yamada-Takamura, Y Fujikawa, Q Xue, J Tolle, J Kouvetakis, Ignatius Tsong, T Sakurai. Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular beam epitaxy. Journal of Applied Physics (2006).
  • C-W Hu, Ignatius Tsong, V D'Costa, J Menendez, P Crozier, J Tolle, J Kouvetakis. Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)(4-n)SiH(n) hydrides. Applied Physics Letters (2005).
  • C-W Hu, J Menendez, Ignatius Tsong, J Tolle, A Chizmeshya, C Ritter, J Kouvetakis. Low-temperature pathways to Ge-rich Si(1-x)Ge(x) alloys via single-source hydride chemistry. Applied Physics Letters (2005).
  • H Hibino, Y Watanabe, C-W Hu, Ignatius Tsong. Thermal decay of superheated 7x7 islands and supercooled "1x1" vacancy islands on Si(111). Physical Review B (2005).
  • J Tolle, J Kouvetakis, D-W Kim, S Mahajan, A Chizmeshya, C-W Hu, A Bell, F Ponce, Ignatius Tsong. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications: A review. Chinese Journal of Physics (2005).
  • P-L Liu, A Chizmeshya, J Kouvetakis, Ignatius Tsong. First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001). Physical Review B (2005).
  • R Roucka, J Tolle, Andrew Chizmeshya, Ignatius Tsong, John Kouvetakis. Epitaxial film growth of zirconium diboride on Si(001). Journal of Crystal Growth (2005).
  • R Trivedi, J Tolle, Andrew Chizmeshya, R Roucka, Cole Ritter, John Kouvetakis, Ignatius Tsong. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation. Applied Physics Letters (2005).
  • Rahul Trivedi, Po-Liang Liu, Radek Roucka, John Tolle, Andrew Chizmeshya, Ignatius Tsong, John Kouvetakis. Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB2 Templates. Chemistry of Materials (2005).
  • Z Wang, Ignatius Tsong, Y Yamada-Takamura, Y Fujikawa, T Sakurai, Q Xue, J Tolle, P Liu, A Chizmeshya, John Kouvetakis. Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers. Physical Review Letters (2005).
  • C Hu, A Chizmeshya, J Tolle, John Kouvetakis, Ignatius Tsong. Nucleation and growth of epitaxial ZrB2(0001) on Si(111). Journal of Crystal Growth (2004).
  • H Hibino, Y Homma, C Hu, M Uwaha, T Ogino, Ignatius Tsong. Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy. Applied Surface Science (2004).
  • J Tolle, J Kouvetakis, D Kim, S Mahajan, A Bell, F Ponce, Ignatius Tsong, M Kottke, Z Chen. Epitaxial growth of Al(x)Ga(1-x)N on Si(111) via a ZrB2(0001) buffer layer. Applied Physics Letters (2004).
  • C Hu, A Bell, L Shi, F Ponce, D Smith, Ignatius Tsong. Structural and optical properties of coherent GaN layers grown on 6H-SiC(0001)-(rt3xrt3). Applied Physics Letters (2003).
  • C Hu, J Taraci, J Tolle, M Bauer, Peter Crozier, Ignatius Tsong, J Kouvetakis. Synthesis of Highly Coherent SiGe and Si4Ge Nanostructures by Molecular Beam Epitaxy of H3SiGeH3 and Ge(SiH3)4. Chemistry of Materials (2003).
  • J Tolle, R Roucka, Ignatius Tsong, Andrew Chizmeshya, John Kouvetakis. Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer. Applied Physics Letters (2003).
  • L Torrison, J Tolle, Ignatius Tsong, J Kouvetakis. Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy. Thin Solid Films (2003).
  • L Torrison, J Tolle, J Kouvetakis, S Dey, D Gu, Ignatius Tsong, P Crozier. Stoichiometric and non-stoichiometric films in the Si-O-N system: mechanical, electrical and dielectric properties. Materials Science and Engineering B (2003).
  • R Roucka, J Tolle, Andrew Chizmeshya, P Crozier, C Poweleit, D Smith, J Kouvetakis, Ignatius Tsong. Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN. Applied Surface Science (2003).
  • A Bell, C Hu, F Ponce, Ignatius Tsong, David Smith. Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism. Appl. Phys. Lett (2002).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. A study of mass transport on Si(111) surfaces by low-energy electron microscopy. J. Surf. Sci. Soc. Jpn (2002).
  • J Tolle, R Roucka, A Chizmeshya, P Crozier, D Smith, Ignatius Tsong, J Kouvetakis. Novel synthetic pathways to wide band gap semiconductors in the Si-C-Al-N system. Solid State Sci (2002).
  • J Tolle, R Roucka, P Crozier, Andrew Chizmeshya, Ignatius Tsong, J Kouvetakis. Growth of SiCAlN on Si(111) via a crystalline oxide interface. Appl. Phys. Lett (2002).
  • M Tsai, O Sankey, Kevin Schmidt, Ignatius Tsong. Electronic Structures of Polar and Nonpolar GaN Surfaces. Mat. Sci. Eng. B (2002).
  • R Roucka, J Tolle, A Chizmeshya, P Crozier, Christian Poweleit, D Smith, Ignatius Tsong, J Kouvetakis. Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN. Phys. Rev. Lett (2002).
  • C Hu, H Hibino, J Kouvetakis, J Nielsen, J Pelz, Ignatius Tsong. Controlled striped phase formation on ultra-flat Si(001) surfaces during diborane exposure. Appl. Phys. Lett (2001).
  • C Hu, H Hibino, J Nielsen, J Pelz, Ignatius Tsong. Enhanced terrace stability for preparation of step-free Si(001)-(2x1) surfaces. Phys. Rev. Lett (2001).
  • C Hu, H Hibino, T Ogino, Ignatius Tsong. Hysteresis in the (1x1)-(7x7) first-order phase transition on the Si(111) surface. Surface Sci (2001).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. Decay kinetics of two-dimensional islands and holes on Si (111) studied by low-energy electron microscopy. Phys. Rev. B (2001).
  • H Hibino, C Hu, T Ogino, Ignatius Tsong. Diffusion barrier caused by (1x1)-(7x7) on Si(111) during phase transition. Phys. Rev. B (2001).
  • Q Xue, Q Xue, S Kuwano, K Nakayama, T Sakurai, Ignatius Tsong, X Qiu, Y Segawa. Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC. J. Cryst. Growth (2001).
  • R Roucka, J Tolle, D Smith, Peter Crozier, Ignatius Tsong, J Kouvetakis. Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates. Appl. Phys. Lett (2001).
  • C Hu, D Smith, R Doak, Ignatius Tsong. Morphological Control of GaN Buffer Layers Grown by Molecular Beam Epitaxy on 6H-SiC (0001). Surf. Rev. Lett (2000).
  • D Jordan, Ignatius Tsong, D Smith, B Wilkens, R Doak. III-N Semiconductor Growth with Activated Nitrogen: a State-Specific Study of A3 Metastable N2 Molecules. Appl. Phys. Lett (2000).
  • J Stirman, F Ponce, A Pavlovska, Ignatius Tsong, D Smith. Polarity Determination and Atomic Arrangements at a GaN/SiC Interface using High-resolution Image Matching. Appl. Phys. Lett (2000).
  • M Chirita, H Xia, R Sooryakuma, J Tolle, V Torres, B Wilkens, D Smith, J Kouvetakis, Ignatius Tsong. Elastic Properties of Nano-crystalline Zirconium-silicon-boron Thin Films. J. Appl. Phys (2000).
  • Q Xue, Q Xue, S Kuwano, T Sakurai, T Ohno, Ignatius Tsong, X Qiu, Y Segawa. Imaging wurtzite GaN surfaces by molecular beam epitaxy - scanning tunneling microscopy. Thin Solid Films (2000).
  • S Hearne, J Han, S Lee, J Floro, D Follstaedt, E Chason, Ignatius Tsong. Brittle-ductile Relaxation Kinetics of Strained AlGaN/GaN Heterostructures. Appl. Phys. Lett (2000).
  • Torres, V M (Author) ,Jordan, D C (Author) ,Tsong, Ignatius Siu Tung (Author) ,Doak, R B (Author) . Supersonic beam epitaxy of wide bandgap semiconductors. Atomic and Molecular Beams - The State of the Art 2000 (2000).
Research Activity
Spring 2014
Course NumberCourse Title
PHY 333Electronic Circuits/Measuremnt
Presentations
  • Ignatius Tsong. InGaN multiple quantum well light-emitting diodes grown on Si(111) substrates. Symposium on Surface and Nano Science 2011 (Jan 2011).
  • P.A. Crozier, C.D. Poweleit, and I.S.T. Tsong. Microstructure and Photoluminescence of Si(1-x)Ge(x) Nanodots. Symposium on Surface and Nano Science 2008 (Jan 2008).
  • Tsong, Ignatius. Growth of Group III-Nitrides on Silicon. Utah State University colloquium (Oct 2007).
  • Tsong, Ignatius. Optical Studies of Si(1-x)Ge(x) Nanodots. Symposium on Surface Science 2007 (Mar 2007).
  • Tsong, Ignatius. Optical Studies of Si(1-x)Ge(x) Nanodots. Symposium on Surface abd Nano Science 2007 (Jan 2007).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Symposium on Surface Science 2006 (Mar 2006).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Surface Physics 2006 (SSP'06) (Jan 2006).
  • Tsong, Ignatius. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications. Workshop on Challenges in Multifunctional Material Stoichiometry (Jul 2005).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for III-nitride applications. $th International Workshop on Surfaces (May 2005).
  • Tsong, Ignatius. Epitaxial growth of ZrB2(0001) on Si(111) for III-nitride applications. 2005 RCIQE International Seminar for 21st Century COE Program (Feb 2005).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for group III nitride applications. IFCAM Forum on Electronic Properties of Interfaces and Contacts (Nov 2004).
  • Tsong, Ignatius. Nucleation and growth of epitaxial ZrB2(0001) on Si(111) for group III nitride applications. Sixth Taipei Symposium on Surfaces, Thin Films and Nano Sciences, Academia Sinica (Aug 2004).
  • Tsong, Ignatius. Growth of AlGaN on silicon substrates for microelectronic and optoelectronic applications. Approaches to Combat Terrorism Principal Investigator Workshop, National Science Foundation (Jun 2004).
  • Tsong, Ignatius. Growth of self-assembled and patterned GaN quantum dots. Nano Factory International Symposium, Meijo University (May 2004).
  • Tsong, Ignatius. Nucleation and growth of ZrB2(0001) on Si(111). Symposium on Surface Science (Feb 2004).
  • Tsong, Ignatius. Characterization of ZrB2(0001) heteroepitaxy on Si(111) for III-nitride applications. 5th International Symposium on Atomic Level Characterizations of New Materials
  • Tsong, Ignatius. Epitaxial film growth of hexagonal zirconium diboride on Si(001). Symposium for Surface Physics
Service
  • Space Committee, Member (2010 - 2011)
  • Committee on Committies, Chair (2009 - 2011)
  • Committee on Committies, Member (2009 - 2011)
  • Computer Committee, Chair (2007 - 2008)
  • Graduate Exam Committee, Member (2007 - 2008)
  • Graduate Exam Committee, Member (2005 - 2007)
  • Graduate Program Committee, Member (2005 - 2007)
  • School of Materials Implementation Committee, Member (2005 - 2006)
  • Space Committee, Member (2003 - 2004)
  • The Encyclopedia of Materials, Eisevier, Subject Editor (1998 - 2001)
  • US-Japan Seminar on Mesoscopic Phenomena on Surfaces, Chairman (2000 - 2000)