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Jose Menendez

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Professor
Faculty, TEMPE Campus, Mailcode 1504
Senior Sustainability Scientist
Faculty, TEMPE Campus, Mailcode 1504
Publications
  • Jiang, Liying; Aoki, Toshihiro; Smith, David J; Chizmeshya, Andrew VG; Menendez, Jose; Kouvetakis, John. Nanostructure Property Control in AlPSi3/Si (100) Semiconductors Using Direct Molecular Assembly: Theory Meets Experiment at the Atomic Level. Chemistry of Materials (2014).
  • Jiang, Liying; Xu, Chi; Gallagher, James D; Favaro, Ruben; Aoki, Toshi; Menéndez, José; Kouvetakis, John;. Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications. Chemistry of Materials (2014).
  • Kouvetakis, John; Favaro, Ruben; Grzybowski, GJ; Senaratne, Charutha; Menéndez, José; Chizmeshya, Andrew VG. Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si (100) using S (MH3) 2 (M= Si, Ge) delivery sources: An experimental and theoretical inquiry. Chemistry of Materials (2014).
  • Senaratne, CL; Gallagher, James D; Aoki, Toshihiro; Kouvetakis, John; Mené�ndez, José;. Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries. Chemistry of Materials (2014).
  • Senaratne, CL; Gallagher, JD; Jiang, Liying; Aoki, Toshihiro; Smith, DJ; Menéndez, J; Kouvetakis, J;. Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties. Journal of Applied Physics (2014).
  • Xu, Chi; Beeler, Richard T; Jiang, Liying; Gallagher, James D; Favaro, Ruben; Menéndez, José; Kouvetakis, John. Synthesis and optical properties of Sn-rich Ge 1-x-y Si x Sn y materials and devices. Thin Solid Films (2014).
  • Aoki, T; Jiang, L; Chizmeshya, AVG; Menéndez, J; Kouvetakis, J; Smith, David J;. Atomic Scale Studies of Structure and Bonding in A1PSi 3 Alloys Grown Lattice-matched on Si (001). Microscopy and Microanalysis (2014).
  • Jiang, Liying; Aoki, Toshihiro; Kouvetakis, John; Menéndez, José;. High Resolution EELS Study of Ge 1-y Sn y and Ge 1-xy Si x Sn y Alloys. Microscopy and Microanalysis (2014).
  • Kong, Dexin; Jiang, Liying; Menéndez, J; Drucker, J. Tuning surface plasmon resonances of Ag nanoparticles. Bulletin of the American Physical Society (2014).
  • Kouvetakis, John; Menendez, Jose. Epitaxy of light emitting SiGeSn materials using novel precursors. Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International (2014).
  • Menendez, Jose; Sims, Patrick; Jiang, Liying; Kouvetakis, John. Optical and structural properties of (III-V)x(IV)5-2x alloys. Bulletin of the American Physical Society (2014).
  • C. Xu, L. Jiang, J. Kouvetakis, and J. Menéndez. Optical properties of Ge1-x-ySixSny alloys with y>x: Direct bandgaps beyond 1550 nm. Applied Physics Letters (2013).
  • C. Xu, R. T. Beeler, L. Jiang, G. Grzybowski, A. V. G. Chizmeshya, J. Menéndez, and J. Kouvetakis. New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case. Semiconductor Science and Technology (2013).
  • G. Grzybowski, A. V. G. Chizmeshya, C. Senaratne, J. Menéndez, and J. Kouvetakis. Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication. Journal of Materials Chemistry C (2013).
  • J. D. Gallagher, C. Xu, L. Jiang, J. Kouvetakis, and J. Menéndez. Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys. Applied Physics Letters (2013).
  • L. Jiang, P. E. Sims, G. Grzybowski, R. T. Beeler, A. V. G. Chizmeshya, D. J. Smith, J. Kouvetakis, and J. Menéndez. Nanoscale assembly of silicon-like [Al(As1-xNx)]ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties. Physical Review B (2013).
  • P. E. Sims, A. V. Chizmeshya, L. Jiang, R. T. Beeler, C. D. Poweleit, J. Gallagher, D.J. Smith, J. Menéndez, and J. Kouvetakis. Rational design of monocrystalline (InP)yGe5-2y/Ge/Si(100) semiconductors: synthesis and optical properties. J. Am. Chem. Soc (2013).
  • R. T. Beeler, J. Gallagher, C. Xu, L. Jiang, C. L. Senaratne, D. J. Smith, J. Menéndez, A.V.G. Chizmeshya, and J. Kouvetakis. Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices. ECS Journal of Solid State Science and Technology (2013).
  • A. V. G. Chizmeshya, J. Kouvetakis, G. Grzybowski, R. T. Beeler, and J. Menéndez. Nano-Synthesis Approach to the Fabrication of Monocrystalline Silicon-like (III-V)yIV5-2y Semiconductors. ECS Transactions (2013).
  • G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, A. V. G. Chizmeshya, J. Kouvetakis, and J. Menéndez. GeSn Alloys on Si Using Deuterated Stannane and Trigermane: Synthesis and Properties. ECS Transactions (2013).
  • R. T. Beeler, J. Menéndez, D. J. Smith, and J. Kouvetakis. High Performance Group IV Photodiodes with Tunable Absorption Edges based on Ternary SiGeSn Alloys. ECS Transactions (2013).
  • C. Xu, R. T. Beeler, G. J. Grzybowski, A. V. Chizmeshya, D. J. Smith, J. Menendez, and J. Kouvetakis. Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si-Ge-Sn. J. Am. Chem. Soc (2012).
  • G. Grzybowski, L. Y. Jiang, R. T. Beeler, T. Watkins, A. V. G. Chizmeshya, C. Xu, J. Menéndez, and J. Kouvetakis. Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)". Chemistry of Materials (2012).
  • G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, J. Kouvetakis, and J. Menéndez,. Next generation of Ge1-ySny (y?=?0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission. Appl. Phys. Lett (2012).
  • G. Grzybowski, T. Watkins, R. T. Beeler, L. Jiang, D. J. Smith, A. V. G. Chizmeshya, J. Kouvetakis, and J. Menéndez. Synthesis and Properties of Monocrystalline Al(As1–xPx)Si3 Alloys on Si(100). Chemistry of Materials (2012).
  • J. Kouvetakis, A. V. G. Chizmeshya, L. Jiang, T. Watkins, G. Grzybowski, R. T. Beeler, C. Poweleit, and J. Menéndez. Monocrystalline Al(As1–xNx)Si3and Al(P1–xNx)ySi5–2y Alloys with Diamond-like Structures: New Chemical Approaches to Semiconductors Lattice Matched to Si. Chemistry of Materials (2012).
  • J. T. Teherani, W. Chern, D. A. Antoniadis, J. L. Hoyt, L. Ruiz, C. D. Poweleit, and J. Menéndez. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates. Phys. Rev. B (2012).
  • R. Singh, C. D. Poweleit, E. Dailey, J. Drucker, and J. Menéndez. Raman scattering characterization of strain in Ge–Si core–shell nanowires. Semicond. Sci. Technol (2012).
  • R. T. Beeler, C. Xu, D. J. Smith, G. Grzybowski, J. Menéndez, and J. Kouvetakis. Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4. Appl. Phys. Lett (2012).
  • R. T. Beeler, D. J. Smith, J. Kouvetakis, and J. Menendez. GeSiSn Photodiodes With 1 eV Optical Gaps Grown on Si(100) and Ge(100) Platforms. Photovoltaics, IEEE Journal of (2012).
  • T. Watkins, L. Jiang, C. Xu, A. V. G. Chizmeshya, D. J. Smith, J. Menéndez, and J. Kouvetakis. (Si)5-2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units. App. Phys. Lett (2012).
  • G. Grzybowski, L. Jiang, J. Mathews, R. Roucka, C. Xu, R. T. Beeler, J. Kouvetakis, and J. Menéndez. Photoluminescence from heavily doped GeSn:P materials grown on Si(100). Appl. Phys. Lett (2011).
  • G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. Beeler, J. Kouvetakis, and J. Menéndez. Direct versus indirect optical recombination in Ge films grown on Si substrates. Phys. Rev. B (2011).
  • J. Menéndez, R. Singh, and J. Drucker. Theory of strain effects on the Raman spectrum of Si-Ge core-shell nanowires. Annalen der Physik (2011).
  • R. Beeler, R. Roucka, A. Chizmeshya, J. Kouvetakis, and J. Menéndez. Nonlinear structure-composition relationships in the Ge1-ySny/Si(100) system. Phys. Rev. B (2011).
  • R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis. High performance near IR photodiodes: Novel chemistry-based approach to Ge and Ge-Sn materials integrated on silicon. IEEE J. Quant. Electron (2011).
  • R. Roucka, J. Mathews, R. T. Beeler, J. Tolle, J. Kouvetakis, and J. Menéndez. Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes. Appl. Phys. Lett (2011).
  • R. Roucka, R. Beeler, J. Mathews, M.-Y. Ryu, Y. Kee Yeo, J. Menéndez, and J. Kouvetakis. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100). J. Appl. Phys (2011).
  • R. Singh, E. J. Dailey, J. Drucker, and J. Menéndez. Raman scattering from Ge-Si core-shell nanowires: Validity of analytical strain models. J. Appl. Phys (2011).
  • R. T. Beeler, G. J. Grzybowski, R. Roucka, L. Jiang, J. Mathews, D. J. Smith, J. Menéndez, A. V. G. Chizmeshya, and J. Kouvetakis. Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices. Chemistry of Materials (2011).
  • S. Bagchi, C. Poweleit, R. Beeler, J. Kouvetakis, and J. Menéndez. Temperature dependence of the Raman spectrum in Ge1-ySy and Ge1-x-ySixSny alloys. Phys. Rev. B 84 193201 (2011) (2011).
  • T. Watkins, A. V. Chizmeshya, L. Jiang, D. J. Smith, R. T. Beeler, G. Grzybowski, C. D. Poweleit, J. Menendez, and J. Kouvetakis. Nanosynthesis Routes to New Tetrahedral Crystalline Solids: Silicon-like Si3AlP. J. Am. Chem. Soc (2011).
  • J. B. Tice, V. R. D’Costa, G. Grzybowski, A. V. G. Chizmeshya, J. Tolle, J. Menéndez, and J. Kouvetakis. Synthesis and Optical Properties of Amorphous Si3N4-xPx Dielectrics and Complementary Insights from ab Initio Structural Simulations. Chemistry of Materials (2010).
  • J. Kouvetakis, J. Mathews, R. Roucka, A. V. G. Chizmeshya, J. Tolle, and J. Menéndez. Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices. IEEE Photonics Journal (2010).
  • J. Mathews, R. T. Beeler, J. Tolle, C. Xu, R. Roucka, J. Kouvetakis, and J. Menéndez. Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon. Appl. Phys. Lett (2010).
  • J. Xie, A. V. G. Chizmeshya, J. Tolle, V.R. D’Costa, J. Menéndez, and J. Kouvetakis. Synthesis, Stability Range, and Fundamental Properties of Si-Ge-Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms. Chemistry of Materials (2010).
  • J.B. Tice, A.V.G. Chizmeshya, J. Tolle, V.R. D'Costa, J. Menéndez, and J. Kouvetakis. Practical routes to (SiH3)3P: Applications in group IV semiconductor activation and in group III-V molecular synthesis. Dalton Transactions (2010).
  • R. Beeler, J. Mathews, C. Weng, J. Tolle, R. Roucka, A. V. G. Chizmeshya, R. Juday, S. Bagchi, J. Menéndez, and J. Kouvetakis. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications. Solar Energy Materials and Solar Cells (2010).
  • R. Roucka, Y. Y. Fang, J. Kouvetakis, A. V. G. Chizmeshya, and J Menéndez. Thermal Expansivity of Ge1-ySny alloys. Phys. Rev. B (2010).
  • V. R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis, and J. Menéndez. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors. Thin Solid Films (2010).
  • J. B. Tice, C. G. Weng, J. Tolle, V. R. D'Costa, R. Singh, J. Menéndez, J. Kouvetakis, and A. V. G. Chizmeshya. Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (2009).
  • J. Mathews, R. Roucka, J. Q. Xie, S. Q. Yu, J. Menéndez, and J. Kouvetakis. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications. Applied Physics Letters (2009).
  • J. Q. Xie, J. Tolle, V. R. D'Costa, A. V. G. Chizmeshya, J. Menéndez, and J. Kouvetakis. Direct integration of active Ge1-x(Si4Sn)x semiconductors on Si (100). Applied Physics Letters (2009).
  • J. Q. Xie, J. Tolle, V. R. D'Costa, C. Weng, A. V. G. Chizmeshya, J. Menéndez, and J. Kouvetakis. Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties. Solid-State Electronics (2009).
  • J. Tolle, R. Roucka, B. Forrest, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D'Costa, C. D. Poweleit, M. Groenert, T. Sato, and J. Menéndez. Integration of Zn-Cd-Te-Se Semiconductors on Si Platforms via Structurally Designed Cubic Templates Based on Group IV Elements. Chemistry Of Materials (2009).
  • José Menéndez. Analytical strain relaxation Model for Si1-xGex epitaxial layers. Journal of Applied Physics (2009).
  • V. R. D'Costa, J. Tolle, J. Q. Xie, J. Kouvetakis, and J. Menéndez. Infrared dielectric function of p-type Ge0.98Sn0.02 alloys. Physical Review B (2009).
  • V. R. D'Costa, Y. Fang, J. Mathews, R. Roucka, J. Tolle, J. Menendez, and J. Kouvetakis. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands. Semiconductor Science and Technology (2009).
  • V. R. D'Costa, Y. Y. Fang, J. Kouvetakis, and J. Menénde. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys. Physical Review Letters (2009).
  • Y. Y. Fang, J. Tolle, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D'Costa, and J. Menénde. Practical B and P doping via SixSnyGe1-x-y-zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior. Applied Physics Letters (2009).
  • Y. Y. Fang, V. R. D'Costa, J. Tolle, J. B. Tice, C. D. Poweleit, J. Menéndez, and J. Kouvetakis. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix /Si(100) materials using nanoscale building blocks. Solid State Communications (2009).
  • G. Sun, J.B. Khurgin, J. Menéndez, R.A. Soref. Group-IV quantum cascade laser operating in the L-valleys. 2008 Quantum Electronics and Laser Conference (QELS), 2008 (2008).
  • R Roucka, J Tolle, B Forrest, J Kouvetakis, V D'Costa, Jose Menendez. Ge1- ySny/Si(100) composite substrates for growth of InxGa1-xAs and GaAs1-xSbx alloys. J. Appl. Phys (2007).
  • Soref, R, Kouvetakis, J, Menendez, Jose. Advances in SiGSn/Ge technology, in Group IV Semiconductor Nanostructures. (2007).
  • A Chizmeshya, C Ritter, J Tolle, C Cook, Jose Menendez, John Kouvetakis. Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors. Chemistry of Materials (2006).
  • B McCarthy, C Poweleit, D Sarid, S Park, T Chen, T Milster, Jose Menendez. Near-field solid immersion lens microscope with advanced compact mechanical design. Optical Engineering (2006).
  • J Tolle, A Chizmeshya, Y Fang, J Kouvetakis, V D'Costa, C Hu, Jose Menendez, I Tsong. Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures. Applied Physics Letters (2006).
  • J Tolle, AVG RRoucka, J Kouvetakis, V D'Costa, Jose Menendez. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon. Applied Physics Letters (2006).
  • R Roucka, Y An, A Chizmeshya, J Tolle, J Kouvetakis, V D'Costa, Jose Menendez, P Crozier. Epitaxial semimetallic HfxZr1-xB2 templates for optoelectronic integration on silicon. Applied Physics Letters (2006).
  • V D'Costa, C Cook, A Birdwell CL Litter, M Canonico, S Zolner, J Kouvetakis, Jose Menendez. Optical critical points of thin-film Ge1-ySny alloys: a comparative Ge1-ySny/Ge1-xSix study. Physical Review B (2006).
  • V D'Costa, C Cook, Jose Menendez, J Tolle, J Kouvetakis. Transferability of optical bowing parameters between binary and ternary group-IV alloys. Solid State Communications (2006).
  • Tolle, J, Roucka, R, D'Costa, V, Menendez, Jose, Chizmeshya, A, Kouvetakis, J. Sn-based group-IV semiconductors on Si: new infrared materials and new templates for mismatched epitaxy. (2006).
  • Kouvetakis, J, Menendez, Jose, Chizmeshya, A. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon. (2006).
  • C Aku-Leh, J Zhao, R Merlin, Jose Menendez, M Cardona. Long-lived optical phonons in ZnO studied with impulsive stimulated Raman scattering. Physical Review B (Condensed Matter and Materials Physics) (2005).
  • C-W Hu, Jose Menendez, I Tsong, J Tolle, A Chizmeshya, C Ritter, J Kouvetakis. Low-temperature pathways to Ge-rich Si/sub 1-x/Ge/sub x/ alloys via single-source hydride chemistry. Applied Physics Letters (2005).
  • G Bussi, Jose Menendez, J Ren, M Canonico, E Molinari. Quantum interferences in the Raman cross section for the radial breathing mode in metallic carbon nanotubes. Physical Review B (Condensed Matter and Materials Physics) (2005).
  • Hu Changwu, I Tsong, V D'Costa, Jose Menendez, P Crozier, J Tolle, J Kouvetakis. Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH/sub 3/)/sub 4-n/SiH/sub n/ hydrides. Applied Physics Letters (2005).
  • P Shetty, N Theodore, J Ren, Jose Menendez. Formation and characterization of silicon films on flexible polymer substrates. Materials Letters (2005).
  • R Roucka, J Tolle, C Cook, A Chizmeshya, J Kouvetakis, V D'Costa, Jose Menendez, Z Chen, S Zollner. Versatile buffer layer architectures based on Ge/sub 1-x/Sn/sub x/ alloys. Applied Physics Letters (2005).
  • Menendez, Jose, Van de Walle, C G. Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (2005).
  • Cook, Candi, D'Costa, Vijay, Kouvetakis, John, Zollner, Stefan, Menendez, Jose. Compositional Dependence of critical point transitions in Ge(1-x)Sn(x) alloys. (2005).
  • C Cook, S Zollner, M Bauer, P Aella, J Kouvetakis, Jose Menendez. Optical constants and interband transitions of Ge1-xSnx alloys (x < 0.2) grown on Si by UHV-CVD. Thin Solid Films (2004).
  • F Manjon, M Hernandez-Fenollosa, B Mari, S Li, C Poweleit, A Bell, Jose Menendez, M Cardona. Effect of N isotopic mass on the photoluminescence and chatodoluminescence spectra of gallium nitride. European Physical Journal B (2004).
  • Jose Menendez, J Kouvetakis. Type-I Ge/Ge[sub 1 - x - y]Si[sub x]Sn[sub y] strained-layer heterostructures with a direct Ge bandgap. Applied Physics Letters (2004).
  • L Shi, F Ponce, Jose Menendez. Raman lineshape of the A1 longitudinal optical phonon in GaN. Appl. Phys. Lett (2004).
  • Shiu Fai Li, Matthew Bauer, Jose Menendez, John Kouvetakis. Scaling law for the compositional dependence of Raman frequencies in GeSi and SnGe alloys. Appl. Phys. Lett (2004).
  • Aku-Leh, C, Zhao, J, Merlin, R, Menendez, Jose. Coherent Optical Phonons with very large quality factors: The E/sub 2/ -low mode in ZnO. (2004).
  • Chen, Tao, Felix, David, Park, Sang-Ki, Hauser, Paul, McCarthy, Brendan, Sarid, Dror, Poweleit, Christian, Menendez, Jose, Milster, Tom. Nearfield solid immersion lens (SIL) microscope with advanced compact mechanical design. (2004).
  • Kouvetakis, J, Tolle, J, Menendez, Jose. New IR Semiconductors in the Si-Ge-Sn system. (2004).
  • J Ren, J Page, Jose Menendez. Isotope effects on the Raman spectrum of buckminsterfullerene C60. J. of Raman Spectroscopy (2003).
  • M Bauer, C Ritter, P Crozier, J Ren, Jose Menendez, G Wolf, J Kouvetakis. Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn/sub x/Ge/sub 1-x/ buffer layers. Applied Physics Letters (2003).
  • M Bauer, J Tolle, A Chizmeshya, S Zollner, Jose Menendez, J Kouvetakis. New Ge-Sn materials with adjustable bandgaps and lattice constants. Mater. Res. Soc. Symposium Proceedings (2003).
  • Matthew Bauer, John Tolle, Corey Bungay, Andrew Chizmeshya, David Smith, Jose Menendez, John Kouvetakis. Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates. Solid State Communications (2003).
  • Bauer, M, Tolle, J, Chizmeshya, A, Zollner, S, Menendez, Jose, Kouvetakis, J. New Ge-Sn materials with adjustable bandgaps and lattice constants. (2003).
  • A Debernardi, C Poweleit, M Canonico, S Johnson, Y Zhang, Jose Menendez. Anomalous LO phonon lifetime in AlAs. Phys. Rev. Lett (2002).
  • K McGuire, Z Pan, Z Wang, D Milkie, Jose Menendez, A Rao. Raman Studies of semiconducting oxide nanobelts. J. of Nanoscience and Nanotechnology (2002).
  • Levi Torrison, J Tolle, David Smith, Jose Menendez, C Poweleit, J Kouvetakis. Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source CVD. J. Appl. Phys (2002).
  • M Bauer, J Taraci, J Tolle, A Chizmeshya, S Zollner, D Smith, Jose Menendez, C Hu, J Kouvetakis. Ge-Sn semiconductors for band-gap and lattice engineering. Appl. Phys. Lett (2002).
  • M Canonico, G Adams, C Poweleit, Jose Menendez, J Page, G Harris, H van der Meulen, J Calleja, J Rubio. Characterization of carbon nanotubes using Raman excitation profiles. Phys. Rev. B (2002).
  • Taraci, J, Zollner, S, McCartney, M, Menendez, Jose, Smith, D, Tolle, J, Bauer, M, Duda, E, Edwards, N, Kouvetakis, J. Optical vibrational and structural Ge1-xSnx alloys by UHV-CVD. (2002).
  • J Taraci, G Wolf, J Kouvetakis, S Zollner, M McCartney, Jose Menendez, M Santana, D Smith, A Haaland, A Tutukin, G Gundersen. Synthesis of Silicon-Based Infrared Semiconductors in the Ge-Sn System Using Molecular Chemistry Methods. Journal of the American Chemical Society (2001).
  • J Taraci, J Tolle, M Cartney, Jose Menendez, M Santana, D Smith, J Kouvetakis. Simple chemical routes to diamond-cubic germanium-tin alloys. Appl. Phys. Lett (2001).
  • L Shi, C Poweleit, F Ponce, Jose Menendez, W Chow. Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well. Appl. Phys. Lett (2001).
  • . . Raman Scattering in Materials Science (2000).
  • Menendez, Jose (Author) ,Page, J B (Author) . Vibrational Spectroscopy of C60. Light Scattering in Solids VIII: Fullerenes,Semiconductor Surfaces, Coherent Phonons (2000).
  • Gallagher, JD; Senaratne, CL; Kouvetakis, J; Menéndez, J;. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-yySny alloys. Applied Physics Letters (0).
  • Jiang, L; Gallagher, JD; Senaratne, CL; Aoki, T; Mathews, J; Kouvetakis, J; Menéndez J. Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials. Semiconductor Science and Technology (0).
  • Xu, Chi; Senaratne,CL; Kouvetakis, J; Menéndez, J;. Frustrated incomplete donor ionization in ultra-low resistivity germanium films. Applied Physics Letters (0).
Research Activity
Fall 2017
Course NumberCourse Title
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Summer 2017
Course NumberCourse Title
PHY 792Research
Spring 2017
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Fall 2016
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Summer 2016
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 792Research
Spring 2016
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Fall 2015
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Summer 2015
Course NumberCourse Title
PHY 792Research
Spring 2015
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Fall 2014
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Summer 2014
Course NumberCourse Title
PHY 499Individualized Instruction
PHY 792Research
Spring 2014
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Fall 2013
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation
Summer 2013
Course NumberCourse Title
PHY 499Individualized Instruction
PHY 792Research
Spring 2013
Course NumberCourse Title
PHY 121Univ Physics I: Mechanics
PHY 495Project Research
PHY 792Research
PHY 799Dissertation