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Biography: 

PhD Student Position Available. Please check out our group website for more details. If you are interested, please contact Prof. Fu at houqiang@asu.edu

 

Prof. Fu received the PhD degree in Electrical Engineering from Arizona State University (ASU) in 2019, and the BS degree in Materials Physics from Wuhan University, China in 2014. Prior to joining ASU, he was an Assistant Professor in the Department of Electrical and Computer Engineering at Iowa State University. Prof. Fu’s research focuses on third-generation wide/ultrawide bandgap semiconductor materials and devices for applications in electronics and photonics. He won the 2021 ISU Regents Innovation Fund Award, the 2019 Palais Outstanding Doctoral Award (the highest honor for ASU ECEE PhD graduates) and the 2018 ASU Outstanding Research Award. His work has been chronicled in over 160 journal and conference publications, 4 book chapters, and 11 patents. His research has been featured by many media outlets including IEEE Spectrum, Semiconductor Today, Compound Semiconductor, Silicon Valley Microelectronics.

Education: 

PhD, Electrical Engineering, Arizona State University (2019)

BS, Materials Physics, Wuhan University (2014)

Research Interests: 

Broad research interests span the fields of solid-state electronics, optoelectronics and photonics, semiconductors, device physics, and nanotechnology. Specific interests include wide/ultrawide bandgap (WBG/UWBG) semiconductors (GaN and nitride alloys, Ga2O3, AlN, BN, and diamond) for applications in electronics (e.g., power electronics and ICs, WBG/UWBG CMOS and RRAM for computing, RF/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronic devices, waveguides, nonlinear optics, quantum photonics), MOCVD epitaxial growth, nanofabrication and nano-scale characterization, new physics, materials, and devices for future solid-state (opto)electronics and photonics.

Research Group: 

We are currently looking for motivated Ph.D. students to join our dynamic and fast-growing group at Arizona State University. You will have the unique opportunity to work on the third-generation semiconductors: wide bandgap (WBG) semiconductors such as GaN, Ga2O3, AlN, and BN. You will be exposed to and gain experience in the whole life-cycle of semiconductors, from MOCVD growth, to device design and simulation, to nanofabrication, to materials and devices characterizations, and circuits and system integration. These exciting and interesting WBG semiconductors are at the forefront of semiconductor materials and devices research, and they are revolutionizing our lives in numerous ways (e.g, LEDs, lasers, power electronics, RF/mm Wave devices for 5G, PICs). This is a research area where you can devote your passion and make a lasting impact. 

 

Ideal candidates should have a B.S. or M.S. degree with a background in electrical engineering, physics, power electronics and circuits, materials science, photonics, optical engineering, or other related areas. The positions will remain open until filled by qualified candidates. If you are interested, please email your CV to Prof. Fu’s email at houqiang@asu.edu.