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Fernando Ponce

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Professor
Faculty, TEMPE Campus, Mailcode 1504
Professor
Faculty, TEMPE Campus, Mailcode 1504
Biography

Fernando Ponce is a Professor of Physics at Arizona State University.  His research focuses on the physics of semiconductor materials, in particular for light emitting and sensing applications.  He received his BS degree in Physics from the National University of Engineering (UNI) in Lima, Peru, and PhD degree in Materials Science and Engineering from Stanford University.  He worked at Hewlett-Packard Laboratories in Palo Alto, California (1980-1984), and at the Xerox Palo Alto Research Center (1977-1980, 1984-1998).  He has contributed to growth and characterization of photovoltaic materials, to the development of materials for optoelectronic applications and of high-resolution transmission electron microscopy.  He has co-authored over 200 papers and eight patents; and has co-edited nine books. He has been involved in promoting science in Latin America, where he has participated in the organization of several international meetings.  He was Meeting Chair of the 1999 Fall MRS Meeting, and Chair of the 27th International Conference on the Physics of Semiconductors held in Arizona in 2004.  His current interest is in the understanding of the materials properties of III-V nitrides, and their correlation to growth and to device performance for solid state lighting.  He is a fellow of the American Physical Society.  Since 1999, he has been at the Department of Physics, Arizona State University, Tempe, AZ  85287-1504.  Tel: 480-965-5557.  Email: ponce@asu.edu.

Publications
  • B. P. Gunning, C. Fabien, J. J. Merola, E. A. Clinton, W. A. Doolittle, S. Wang, A. M. Fischer, F. A. Ponce. Comprehensive Study of the Electronic and Optical Behavior of Highly Degenerate p-type Mg-Doped GaN and AlGaN. Journal of Applied Physics (2015).
  • X.-H. Li, S. Wang, H. Xie, Y. O. Wei, T.-T. Kao, Md Satter, S.-C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition. Physica Status Solidi B (2015).
  • X.-H. Li, T.-T. Kao, M. M. Satter, Y. O. Wei, S. Wang, H. Xie, S.-C. Shen, P. D. Yoder, A. M. Fischer, F. A. Ponce, T. Detchprohm, R. D. Dupuis. Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates. Applied Physics Letters (2015).
  • C. A. M. Fabien, M. Moseley, B. Gunning, W. A. Doolittle, A. M. Fischer, Y. O. Wei, and F. A. Ponce. Simulations, practical limitations, and novel growth technology for InGaN-based solar cells. IEEE Journal of Photovoltaics (2014).
  • D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, F. A. Ponce, and S.J. Haigh. Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy. Nanotechnology (2014).
  • High Energy and Spatial Resolution EELS Band Gap Measurements Using a Nion Monochromated Cold Field Emission HERMES Dedicated STEM. RW Carpenter, H Xie, S Lehner, T Aoki, J Mardinly, M Vahidi, N Newman, FA Ponce. Microscopy and Microanalysis (2014).
  • J. Kim, Z. Lochner, M.-H. Ji, S. Choi, H.-J. Kim, J.-S. Kim, R. D. Dupuis, A. M. Fischer, R. Juday, Y. Huang, T. Li, J. Y. Huang, F. A. Ponce, J.-H. Ryou. Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, Part II: Effects of underlying layers and growth chamber conditions. Journal of Crystal Growth (2014).
  • Jae-Hyun Ryou, Jeomoh Kim, Suk Choi, Hee Jin Kim, Zachary Lochner, Mi-Hee Ji, Md Mahbub Satter, Theeradetch Detchprohm, P Douglas Yoder, Russell D Dupuis, Mojtaba Asadirad, Jianping Liu, Jin Soo Kim, Alec Fischer, Reid Juday, Fernando Ponce, Min-Ki Kwon, Dajun Yuan, Rui Guo, Suman Das. Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes. ECS Transactions (2014).
  • Optically-pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. Yuh-Shiuan Liu, Tsung-Ting Kao, Md Mahbub Satter, Zachary Lochner, Xiao-Hang Li, Shyh-Chiang Shen, P Douglas Yoder, Theeradetch Detchprohm, Russell D Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando A Ponce. SPIE OPTO, International Society for Optics and Photonics (2014).
  • R. Jakomin, R. M. S. Kawabata, R. T. Mourão, D. N. Micha, M. P. Pires, H. Xie, A. M. Fischer, F. A. Ponce, and P. L. Souza. InAs quantum dot growth on AlxGa1-xAs by MOVPE for intermediate band solar cells. Journal of Applied Physics (2014).
  • S. Choi, H. J. Kim, Z. Lochner, J. Kim, R. D. Dupuis, A. M. Fischer, R. Juday, Y. Huang, T. Li, J. Y. Huang, F. A. Ponce, and J.-H. Ryou. Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, Part I. Journal of Crystal Growth (2014).
  • X.-H. Li, T. Detchprohm, Y.-S. Liu, T.-T. Kao, M. M. Satter, S.-C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. O. Wei, H. Xie, A. M. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrate. Applied Physics Letters (2014).
  • Yuh-Shiuan Liu, Zachary Lochner, Tsung-Ting Kao, Md Satter, Xiao-Hang Li, Jae-Hyun Ryou, Shyh-Chiang Shen, P Douglas Yoder, Theeradetch Detchprohm, Russell D Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce. Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates. Physica Status Solidi C (2014).
  • Christiana Honsberg, Philip Gleckman, William A Doolittle, Fernando Ponce, Chantal Arena, Dragica Vasileska, Stephen M Goodnick. High Temperature InGaN Topping Cells for Hybrid Photovoltaic/Concentrating Solar Thermal Systems. Optical Nanostructures and Advanced Materials for Photovoltaics (2014).
  • A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning, and W. A. Doolittle. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation. Applied Physics Letters (2013).
  • D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, and F. A. Ponce. The growth of In0.5Ga0.5N and InN layers on (111) silicon using nanorod intermediate arrays. Journal of Crystal Growth (2013).
  • D. J. As, A. Zado, Q. Y. Wei, T. Li, J.Y. Huang, and F. A. Ponce. Capacity Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions. Japanese Journal of Applied Physics (2013).
  • J. Kim, M.-H. Ji, Z. Lochner, S. Choi, N. Sebkhi, J. Liu, Md. M. Satter, J.-S. Kim, P. D. Yoder, R. D. Dupuis, R. Juday, A. M. Fischer, F. A. Ponce, and J.-H. Ryou. Improved hole transport by p-InGaN layer in multiple quantum wells of visible LEDs. IEEE Photonics Technology Letters (2013).
  • J. Y. Huang, F. A. Ponce, P. G. Caldas, R. Prioli, and C.M. Almeida. The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals. Journal of Applied Physics (2013).
  • J.-H. Ryou, R. D. Dupuis, P. D. Yoder, and F. A. Ponce. Diminishing droop with superior electron-blocking layers. Compound Semiconductors (2013).
  • R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J.-H. Ryou, R. D. Dupuis, D. P. Bour, and F. A. Ponce. Hydrogen-related, deeply bound excitons in Mg-doped GaN films. Applied Physics Letters (2013).
  • R. Juday, E. M. Silva, J. Y. Huang, P. G. Caldas, R. Prioli, and F. A. Ponce. Strain-related optical properties of ZnO crystals due to nanoindentation on various surface orientations. Journal of Applied Physics (2013).
  • T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. Huang, F. A. Ponce, J. P. Liu, Z. Lochner, J.-H. Ryou, and R. D. Dupuis. The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells. Applied Physics Letters (2013).
  • T.-T. Kao, Y.-S. Liu, M. M. Satter, X.-H. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S.-C. Shen, J.-H. Ryou, A. M. Fischer, Y. O. Wei, H. Xie, F. A. Ponce. Sub-250 nm, low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors. Applied Physics Letters (2013).
  • Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, M. M. Satter, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, Y. O. Wei, H. Xie, A. M. Fischer, and F. A. Ponce. Deep-Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate. Applied Physics Letters (2013).
  • Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, M. M. Satter, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, Y. O. Wei, H. Xie, A. M. Fischer, and F. A. Ponce. Room-temperature optically pumped AlGaN-AlN multiple-quantum –well lasers operating at < 260 nm grown by metalorganic chemical vapor deposition. Proceedings of SPIE (2013).
  • Z. Lochner, X.-H. Li, T.-T. Kao, M. M. Satter, H. J. Kim, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, K. W. Sun, Y. O. Wei, T. Li, A. M. Fischer, and F. A. Ponce. Stimulated emission at 257 nm from an optically-pumped AlGaN/AlN heterostructure on AlN substrate. Physica Status Solidi A (2013).
  • A. M. Fischer, K. W. Sun, F. A. Ponce, R. Songmuang, and E. Monroy. Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires. Applied Physics Express (2012).
  • C. M. Almeida, R. Prioli, Q. Y. Wei, and F. A. Ponce. Early stages of mechanical deformation in indium phosphide with the zinc blende structure. Journal of Applied Physics (2012).
  • Q. Y. Wei, T. Li, J. Y. Huang, F. A. Ponce, E. Tschumak, A. Zado, and D. J. As. Free carrier accumulation at cubic AlGaN/GaN heterojunctions. Applied Physics Letters (2012).
  • Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Chen, T. Egawa, and F. A. Ponce. Compositional instability in InAlN/GaN lattice-matched epitaxy. Applied Physics Letters (2012).
  • S. Choi, M.-H. Ji, J. Kim, H. J. Kim, J. M. Satter, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers. Applied Physics Letters (2012).
  • F. A. Ponce. Electrostatic energy profiles at nanometer-scale in group-III nitride semiconductors using electron holography. Annalen der Physik, 1 January 2011, Vol. 523 (1-2), pp 75-86 (2011).
  • F. A. Ponce. Microstructure and polarization fields in nitride semiconductors. Journal of Physics: Conference Series (2011).
  • J. Y. Huang, F. A. Ponce, P. G. Caldas, C. M. Almeida, and R. Prioli. Microstructure of nanoscratched semiconductors. Journal of Physics: Conference Series (2011).
  • J.-P. Liu, Y. Zhang, Z. Locher, S.-S. Kim, H. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Y. Wei, K. W. Sun, A. M. Fischer, and F. A. Ponce. Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 1 January 2011, Vol. 315, 272-277 (2011).
  • P. G. Caldas, R. Prioli, C. M. Almeida, J. Y. Huang, and F. A. Ponce. Plastic hardening in cubic semiconductors by nanoscratching. Journal of Applied Physics, 1 January 2011, Vol. 109 (01), 013502 (2011).
  • R. Oshima, J. Y. Huang, N. Miyashita, K. Matsubara, Y. Okada, and F. A. Ponce. Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic-hydrogen-assisted molecular beam epitaxy. Applied Physics Letters (2011).
  • Y. Huang, J.-H. Ryou, R. D. Dupuis, C. Pfluegl, F. Capasso, K. Sun, A. M. Fischer, and F. A. Ponce. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition. Journal of Crystal Growth, 1 February 2011, Vol. 316, 75-80 (2011).
  • Y.Q.Sun,Z.H.Wu,J.Yin,Y.Y.Fang,H.Wang,C.H.Yu,X.Hui,C.Q.Chen,Q.Y.Wei,T.Li,K.W.Sun,and F. A. Ponce. High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates. Thin Film Solids, January 2011, Vol. 519, 2508-2512 (2011).
  • Z.H.Wu,Y.Q.Sun,J.Yin,Y.Y.Fang,J.Dai,C.Q.Chen,Q.Y.Wei,T.Li,K.W.Sun,A.M.Fischer,and F.A. Ponce. Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates. Journal of Vacuum Science and Technology B, 24 January 2011, Vol. 29 (02), 021005 (2011).
  • A. M. Fischer, K. W. Sun, R. Juday, F. A. Ponce, J.-H. Ryou, H. J. Kim, S. Choi, S.-S. Kim, and R. D. Dupuis. Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes. Applied Physics Express, 26 February 2010 (2010).
  • H. D. Fonseca-Filho, C. M. Almeida, R. Prioli, M. P. Pires, P. L. Souza, Z. H. Wu, Q. Y. Wei, and F. A. Ponce. Growth of linearly ordered arrays of InAs nanocrystals on scratched InP. Journal of Applied Physics, 1 March 2010 (2010).
  • Q. Y. Wei, T. Li, Z. H. Wu, and F. A. Ponce. In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation. Physica Status Solidi A, 10 June 2010, Vol. 207 (10), pp 2226-2232 (2010).
  • Q. Y. Wei, Z. H. Wu, F. A. Ponce, J. Hertkorn, and F. Scholz. Polarization effects in 2-DEG and 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography. Physica Status Solidi B, July 2010, Vol. 247 (7), pp 1722-1724 (2010).
  • S. Choi, H. J. Kim, S.-S. Kim, J. P. Liu, J.-M. Kim, J. H. Hyun, R. D. Dupuis, A. M. Fischer, and F. A. Ponce. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron blocking layer. Applied Physics Letters, 3 June 2010, Vol. 96, 221105 (2010).
  • T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel. Carrier localization and non-radiative recombination in yellow emitting InGaN quantum wells. Applied Physics Letters, 20 January 2010 (2010).
  • Z. H. Wu , K. W. Sun, Q. Y. Wei, A. M. Fischer, F. A. Ponce, Y. Kawai, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO. Applied Physics Letters, 18 February 2010 (2010).
  • Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki. Strain relaxation mechanisms in AlGaN epitaxy on AlN templates. Applied Physics Express, 29 October 2010, Vol. 3, 111003 (2010).
  • O. Briot, A. Hoffmann, Y. Nanishi, and F. A. Ponce, editors. Group III Nitride Semiconductors: Proceedings of Symposium J, E-MRS 2009 Spring Meeting. (2010).
  • A. Allerman, R. D. Dupuis, M. A. Khan, and F. A. Ponce. Papers presented at the International Symposium on Semiconductor Light Emitting Devices. Physica Status Solidi A, January 2009 (2009).
  • A. M. Fischer, Z. H. Wu, K. W. Sun, Q. Y. Wei, Y. U. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce. Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN. Applied Physics Express, 3 April 2009 (2009).
  • F. A. Ponce, Z. H. Wu, Q. Y. Wei, H. D. Fonseca-Filho, C. M. Almeida, R. Prioli and D. Cherns. Nanoscale dislocation patterning by scratching in an atomic force microscope. Journal of Applied Physics, 15 October 2009 (2009).
  • J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, M. A. Moram and C. J. Humphreys, C. Vierheilig, and U. T. Schwarz. Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multi-heterostructures grown by MOVPE. Journal of Applied Physics, 14 July 2009 (2009).
  • J. N. Dai, X. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce, and C. Q. Chen. Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers. Journal of Electronic Materials, September 2009 (2009).
  • R. Garcia, B. Ren, A. C. Thomas, and F. A. Ponce. Measurement of the solubility of ammonia and nitrogen in gallium at atmospheric pressure. Journal of Alloys and Compounds (2009).
  • R. Garcia, B. Ren, A. C. Thomas, and F. A. Ponce. Measurement of the solubility of ammonia and nitrogen in gallium at atmospheric pressure. Journal of Alloys and Compounds, 7 January 2009 (2009).
  • A. Allerman, R. D. Dupuis, A. Khan, and F. A. Ponce. Semiconductor Light Emitting Devices: Proceedings of ISSLED-2008. (2009).
  • A. Allerman, R. D. Dupuis, M. A. Khan, and F. A. Ponce. Proceedings of the 7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008). Physica Status Solidi A, January 2009, Vol. 206 (2009).
  • A. M. Fischer, S. Srinivasan, F. A. Ponce, B. Monemar, F. Bertram, and J. Christen. Time-resolved cathodoluminescence of Mg doped GaN. Applied Physics Letters (2008).
  • C. M. Almeida, R. Prioli, and F. A. Ponce. Effect of native oxide mechanical deformation on InP nanoindentation. Journal of Applied Physics (2008).
  • J. Li, S. Srinivasan, G. N. He, J. Y. Kang, S. T. Wu, and F. A. Ponce. Synthesis and luminescence properties of ZnO nanostructures produced by the sol-gel method. Journal of Crystal Growth. Journal of Crystal Growth (2008).
  • J. P. Liu, J. B. Limb, J.-H. Ryou, a_ D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, and K. R. Evans. Blue light-emitting diodes grown on freestanding (11-20) a-plane GaN substrates. Applied Physics Letters (2008).
  • J. P. Liu, J.-H. Ryou, Z. Lochner, J. Limb, D. Yoo, R. D. Dupuis, Z. H. Wu; A. M. Fischer; F. A. Ponce. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition. Journal of Crystal Growth (2008).
  • J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, and R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce. Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes. Applied Physics Letters (2008).
  • L. T. Tan, R. W. Martin, K. P. O’Donnell, I. M. Watson, Z. H. Wu, and F. A. Ponce. Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters (2008).
  • O. E. Contreras, F. Ruiz-Zepeda, A. Dadgar, A. Krost, and F. A. Ponce. Atomic arrangement at the AlN/Si (110) interface. Applied Physics Express (2008).
  • R. Garcia, A. C. Thomas, and F. A. Ponce. Growth of free–standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure. Journal of Crystal Growth (2008).
  • S. Myhajlenko, A. S. Luby, A. M. Fischer, F. A. Ponce, and C. Tracy. SEM characterization of silicon nanostructures: can we meet the challenge?. Scanning (2008).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl. Structural and optical properties of non-polar GaN thin films. Applied Physics Letters (2008).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, T. Yokogawa, and S. Yoshida. Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire. Applied Physics Letters (2008).
  • A. M. Fischer, S. Srinivasan, R. Garcia, F.A. Ponce, S. E. Guaño, B. C. Di Lello, F. J. Moura, and I. G. Solórzano. Optical properties of highly luminescent zinc oxide tetrapod powders. Applied Physics Letters (2007).
  • H. D. Fonseca-Filho, R. Prioli, M. P. Pires, A. S. Lopes, P. L. Souza, and F. A. Ponce. Growth of InAs nanostructures on InP using atomic-force nanolithography. Applied Physics A (2007).
  • J. C. Brooksby, J. Mei, and F. A. Ponce. Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells. Applied Physics Letters (2007).
  • J. Mei, F. A. Ponce, R. S. Qhalid Fareed, J. W. Yang, and M. Asif Khan. Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates. Applied Physics Letters (2007).
  • J. Mei, R. Liu, F. A. Ponce, H. Omiya, and T. Mukai. Basal-plane slip in InGaN/GaN heterostructures in the presence of threading dislocations. Applied Physics Letters (2007).
  • Q. Fareed, V. Adivarahan, M. Gaevski, T. Katona, J. Mei, F. A. Ponce, and M. A. Khan. Metal-organic hydride vapor phase epitaxy of AlN films over sapphire. Japanese Journal of Applied Physics, Part 2 (2007).
  • R. Garcia, A. Bell, A. C. Thomas, and F. A. Ponce. Synthesis of highly luminescent, undoped, Mg-doped, and Si-doped GaN powders. Journal of Crystal Growth (2007).
  • Z Wu, M Stevens, Fernando Ponce, W Lee, J Ryou, D Yoo, R Dupuis. Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography. Applied Physics Letters (2007).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, W. Lee, J. H. Ryou, D. Yoo, and R. D. Dupuis. Effect of internal electrostatic potential on light emission in a green LED with multiple InGaN quantum wells. Applied Physics Letters, 27 July 2007, Vol. 91, (2007).
  • Z. H. Wu, F. A. Ponce, J. Hertkorn, and F. Scholz. Determination of the electronic band structure for a graded modulation-doped AlGaN/AlN/GaN superlattice. Applied Physics Letters (2007).
  • J Mei, S Srinivasan, R Liu, Fernando Ponce, Y Narukawa, T Mukai. Prismatic stacking faults in epitaxially laterally overgrown GaN. Applied Physics Letters (2006).
  • R Garcia, G Hirata, A Thomas, Fernando Ponce. Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route. Optical Materials (2006).
  • R Liu, J Mei, S Srinivasan, Fernando Ponce, D Cherns, Y Narukawa, T Mukai. Misfit dislocation generation in InGaN epilayers on free-standing GaN. Japanese Journal of Applied Physics (2006).
  • R Liu, J Mei, S Srinivasan, Fernando Ponce, H Omiya, Y Narukawa, T Mukai. Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures. Applied Physics Letters (2006).
  • S Srinivasan, M Stevens, Fernando Ponce, H Omiya, T Mukai. Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {1122} GaN pyramidal planes. Applied Physics Letters (2006).
  • Z Chen, R Qhalid Fareed, M Gaevski, V Adivarahan, J Yand, A Khan, J Mei, Fernando Ponce. Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates. Applied Physics Letters (2006).
  • E Trybus, M Furis, A Cartwright, G Namkoong, W Henderson, W Doolittle, R Liu, J Mei, Fernando Ponce, M Cheung, F Chen. Growth of InN on Ge substrate by molecular beam epitaxy. Journal of Crystal Growth (2005).
  • J Tolle, J Kouvetakis, D Kim, S Mahajan, A Chizmeshya, C Hu, A Bell, Fernando Ponce, I Tsong. Epitaxial growth of ZrB2 (0001) on Si (111) for III-nitride applications: A review. Chinese Journal of Physics (2005).
  • R Liu, A Bell, Fernando Ponce, C Chen, J Yang, M Khan. Luminescence from stacking faults in gallium nitride. Applied Physics Letters (2005).
  • S Myhajlenko, J Kulik, A Bell, Fernando Ponce, J Edwards, Y Wei, B Craigo, D Convey, H Li, R Liu. Optoelectronic and microstructure attributes of Epitaxial SrTiO3 on Si. Journal of Applied Physics (2005).
  • S Sahonta, D Cherns, R Liu, Fernando Ponce, H Amano, I Akasaki. CBED study of grain misorientation in AlGaN epilayers. Ultramicroscopy (2005).
  • S Srinivasan, M Stevens, Fernando Ponce, T Mukai. Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets. Applied Physics Letters (2005).
  • W Sun, J Zhang, J Yang, H Maruska, R Liu, Fernando Ponce. Fine structure of Al/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering. Applied Physics Letters (2005).
  • Bell, A, Christen, J, Bertram, F, Stevens, M, Ponce, Fernando, Marui, H, Tanaka, S. Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. (2005).
  • Garcia, R, Bell, A, Thomas, A, Ponce, Fernando. Light emission from GaN microcrystals. (2005).
  • Liu, R, Bell, A, D'Costa, V, Ponce, Fernando, Chen, C, Yang, J, Khan, M. The nature of crystalline defects in a-plane GaN films. (2005).
  • Liu, R, Mei, J, Ponce, Fernando, Narukawa, Y, Omiya, H, Mukai, T. Strain relaxation mechanisms in InGaN epilayers. (2005).
  • Omiya, H, Srinivasan, S, Ponce, Fernando, Tanaka, S, Marui, H, Mukai, T. Crystal structure of low-resistance Au-Ni/p-GaN contacts. (2005).
  • Ponce, Fernando. The 27th International Congress on the Physics of Semiconductors - Opening address. (2005).
  • Srinivasan, S, Omiya, H, Ponce, Fernando, Tanaka, S, Marui, H, Mukai, T. The electronic nature of metal/p-GaN junctions. (2005).
  • Stevens, M, Bell, A, Marui, H, Tanaka, S, Ponce, Fernando. Electrostatic fields and compositional fluctuations in InGaN quantum wells. (2005).
  • A Bell, J Christen, F Bertram, Fernando Ponce, H Marui, S Tanaka. Localization versus field effects in single InGaN quantum wells. Applied Physics Letters (2004).
  • A Bell, J Christen, F Bertram, Fernando Ponce, H Marui, S Tanaka. Localization versus field effects in single InGaN quantum wells. Applied Physics Letters (2004).
  • A Bell, R Liu, U Parasuraman, Fernando Ponce, S Kamiyama, H Amano, I Akasaki. Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth. Applied Physics Letters (2004).
  • A Bell, S Srinivasan, C Plumlee, H Omiya, Fernando Ponce, J Christen, S Tanaka, A Fujioka, Y Nakagawa. Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlGaN layers. Journal of Applied Physics (2004).
  • D Chapman, G Stringfellow, A Bell, Fernando Ponce, J Lee, T Seong. Nitrogen surfactant effects in GaInP. Journal of Applied Physics (2004).
  • D Cherns, S-L Lahonta, R Liu, Fernando Ponce, H Amano, I Akasaki. The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films. Applied Physics Letters (2004).
  • H Amano, Fernando Ponce, S Sahonta, D Cherns, A Miyazaki, K Iida, T Kawashima, M Iwaya, S Kamiyama, I Akasaki, R Liu, A Bell. Defects and stress control of AlGaN for fabrication of high performance UV light emitters. Physica Status Solidi (a) (2004).
  • H Omiya, Fernando Ponce, H Marui, S Tanaka, T Mukai. Atomic arrangement at the Au/p-GaN interface in low-resistance contacts. Applied Physics Letters (2004).
  • J Tolle, J Kouvetakis, D Kim, S Mahajan, A Bell, Fernando Ponce, I Tsong, M Kottke, Z Chen. Epitaxial growth of AlxGa1-xN on Si(111) via a ZrB2(0001)buffer layer. Applied Physics Letters (2004).
  • L Shi, Fernando Ponce, J Menendez. Raman line shape of the A(1) longitudinal optical phonon in GaN. Applied Physics Letters (2004).
  • M Stevens, A Bell, M McCartney, Fernando Ponce, H Marui, S Tanaka. Effect of layer thickness on the electrostatic potential in InGaN quantum wells. Applied Physics Letters (2004).
  • R Liu, Fernando Ponce, D Cherns, H Amano, I Akasaki. Platelet inversion domains induced by Mg-doping in ELOG AlGaN films. Materials Research Society Symposium Proceedings (2004).
  • R Liu, Fernando Ponce, S Sahonta, D Cherns, H Amano, I Akasaki. Effects of Si-doping on the microstructure of AlGaN/GaN multiple quantum wells. Materials Research Society Symposium Proceedings (2004).
  • A Bell, R Liu, Fernando Ponce, H Amano, I Akasaki, D Cherns. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. Applied Physics Letters (2003).
  • A Dadgar, A Krtschil, A Diez, A Kaluza, A Modlich, M Kamp, J Christen, Fernando Ponce, E Kohn, A Krost, M Poschenrieder, J Blasing, O Contreras, F Bertram, T Riemann, A Reiher, M Kunze, I Daumiller. MOVPE growth of GaN on Si(111) substrates. Journal of Crystal Growth (2003).
  • A Dadgar, A Krtschil, A Diez, T Hempel, T Finger, A Kasic, M Schubert, D Bimberg, Fernando Ponce, J Christen, A Krost, A Strittmatter, J Bläsing, M Poschenrieder, O Contreras, P Veit, T Riemann, F Bertram, A Reiher. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon. Physica Status Solidi C (2003).
  • A Dadgar, A Reiher, A Krtschil, O Contreras, A Kaluza, A Modlich, M Kamp, L Reißmann, A Diez, J Christen, Fernando Ponce, M Poschenrieder, D Bimberg, E Kohn, A Krost, I Daumiller, M Kunze, A Strittmatter, T Riemann, F Bertram, J Bläsing, F Schulze. Gallium-nitride-based devices on silicon. Physica Status Solidi C (2003).
  • C Hu, A Bell, L Shi, Fernando Ponce, D Smith, I Tsong. Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(root 3x root 3). Applied Physics Letters (2003).
  • D Cherns, Y Wang, R Liu, Fernando Ponce, H Amano, I Akasaki. Hollow core dislocations in Mg-doped AlGaN. Materials Research Society Symposium Proceedings (2003).
  • Fernando Ponce, S Tanaka, S Srinivasan, A Bell, L Geng, R Liu, M Stevens, J Cai, H Omiya, H Marui. Microstructure and electronic properties of InGaN alloys. physica status solidi (b) (2003).
  • H Ng, A Bell, Fernando Ponce, S Chu. Structural and optical characterization of nonpolar GaN/AlN quantum wells. Applied Physics Letters (2003).
  • M Tsuda, K Watanabe, S Kamiyama, H Amano, I Akasaki, R Liu, A Bell, Fernando Ponce. Mechanism of H-2 pre-annealing on the growth of GaN on sapphire by MOVPE. Applied Surface Science (2003).
  • R Liu, A Bell, Fernando Ponce, D Cherns, H Amano, I Akasaki. Distinct magnesium incorporation behavior in laterally grown AlGaN. Materials Research Society Symposium Proceedings (2003).
  • R Liu, A Bell, Fernando Ponce, H Amano, I Akasaki, D Cherns. Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth. Physica Status Solidi C (2003).
  • R Liu, Fernando Ponce, A Dadgar, A Krost. Atomic arrangement at the AlN/Si(111) interface. Applied Physics Letters (2003).
  • S Srinivasan, L Geng, Fernando Ponce, Y Narukawa, S Tanaka. Glide along non-basal slip planes in InGaN epilayers. Physica Status Solidi C (2003).
  • S Srinivasan, L Geng, R Liu, Fernando Ponce, Y Narukawa, S Tanaka. Slip systems and misfit dislocations in InGaN epilayers. Applied Physics Letters (2003).
  • Y Tomida, Fernando Ponce, S Nitta, S Kamiyama, H Amano, I Akasaki, S Otani, H Kinoshita, R Liu, A Bell. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. Applied Surface Science (2003).
  • S Srinivasan, J Cai, O Contreras, Fernando Ponce, D Look, R Molnar. Luminescence Properties of Charged Dislocations in Semi-Insulating GaN : Zn. Physica Status Solidi C (2002).
Research Activity
Fall 2017
Course NumberCourse Title
PHY 481Materials Physics I
PHY 511Materials Physics I
NAN 511Materials Physics I
MSE 526Materials Physics I
MSE 599Thesis
PHY 792Research
MSE 792Research
PHY 799Dissertation
MSE 799Dissertation
Summer 2017
Course NumberCourse Title
PHY 792Research
MSE 792Research
Spring 2017
Course NumberCourse Title
PHY 482Materials Physics II
PHY 512Materials Physics II
NAN 512Materials Physics II
MSE 527Materials Physics II
MSE 599Thesis
PHY 792Research
MSE 792Research
PHY 799Dissertation
MSE 799Dissertation
Fall 2016
Course NumberCourse Title
PHY 481Materials Physics I
PHY 511Materials Physics I
NAN 511Materials Physics I
MSE 526Materials Physics I
MSE 599Thesis
MSE 792Research
PHY 792Research
PHY 799Dissertation
Summer 2016
Course NumberCourse Title
PHY 792Research
MSE 792Research
Spring 2016
Course NumberCourse Title
PHY 482Materials Physics II
PHY 512Materials Physics II
NAN 512Materials Physics II
MSE 527Materials Physics II
MSE 593Applied Project
MSE 599Thesis
PHY 792Research
MSE 792Research
PHY 799Dissertation
MSE 799Dissertation
Fall 2015
Course NumberCourse Title
PHY 481Materials Physics I
PHY 511Materials Physics I
NAN 511Materials Physics I
MSE 526Materials Physics I
MSE 599Thesis
MSE 792Research
PHY 792Research
PHY 799Dissertation
Summer 2015
Course NumberCourse Title
MSE 792Research
Spring 2015
Course NumberCourse Title
PHY 482Materials Physics II
PHY 512Materials Physics II
NAN 512Materials Physics II
MSE 527Materials Physics II
PHY 792Research
MSE 792Research
PHY 799Dissertation
MSE 799Dissertation
Fall 2014
Course NumberCourse Title
PHY 481Materials Physics I
NAN 511Materials Physics I
PHY 511Materials Physics I
MSE 526Materials Physics I
MSE 792Research
PHY 792Research
PHY 799Dissertation
Summer 2014
Course NumberCourse Title
MSE 792Research
Spring 2014
Course NumberCourse Title
PHY 482Materials Physics II
NAN 512Materials Physics II
PHY 512Materials Physics II
MSE 527Materials Physics II
MSE 792Research
PHY 792Research
PHY 799Dissertation
Fall 2013
Course NumberCourse Title
PHY 481Materials Physics I
NAN 511Materials Physics I
PHY 511Materials Physics I
MSE 526Materials Physics I
MSE 792Research
PHY 792Research
PHY 799Dissertation
Spring 2013
Course NumberCourse Title
PHY 482Materials Physics II
NAN 512Materials Physics II
PHY 512Materials Physics II
MSE 527Materials Physics II
MSE 792Research
PHY 792Research
PHY 799Dissertation
Presentations
  • F. A. Ponce. Direct profiling of the band structure of semiconductors with subnanometer resolution. Brazilian Physical Society Meeting, 38th ENFMC. Foz do Iguaçu, Brazil. May 24-28, '14 (May 2015).
  • F. A. Ponce. The Physics of the Blue LED and of Solid State Lighting. Physics Colloquium, Arizona State University. 15 January 2015 (Jan 2015).
  • F. A. Ponce. Achieving excellence in innovation. Universidad Nacional de Ingenieria. Lima, Peru. 10 November 2014 (Nov 2014).
  • F. A. Ponce. The Physics of InGaN: LEDs and Solar Cells. Materials Science and Engineering Colloquium, Stanford University, Stanford, California. 4 October (Oct 2014).
  • R. Dupuis, F. A. Ponce, et al. Optically-pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. 2014 Photonic West, San Francisco, California, 3 February 2014 (Feb 2014).
  • R. D. Dupuis and F. A. Ponce. Optically-pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. 2014 Photonic West, Inv. paper #9002-16. San Francisco, California, 3 Feb 2014 (Feb 2014).
  • F. A. Ponce. III-Nitride Semiconductors: Applications to solid state lighting and photovoltaics. 7th International Conference of Materials (CIM 2013). Medellín, Colombia. 29 Oct – 1 Nov 2013 (Oct 2013).
  • F. A. Ponce. Nanoindentation and nanoscratching of semiconductor materials. Physics Colloquium, Pontificia Universidade Católica do Rio de Janeiro, Brazil. 4 July 2013 (Jul 2013).
  • F. A. Ponce. Exploring the properties of solids with atomic resolution. Lecture series, Physics Department, P. U. Católica do Rio de Janeiro, Brazil. July-Aug 2013 (Jul 2013).
  • F. A. Ponce. Nanoscale plastic deformation for nucleation and growth of semiconductor nanostructures. Nanoscale Science Seminar, Arizona State University, Tempe, Arizona. 15 April 2013 (Apr 2013).
  • F. A. Ponce. Science, Technology, and Innovation – Current trends. Workshop on Science, Technology and Innovation, Consejo Nacional de Ciencia y Tecnología (CONCYTEC) (Jun 2012).
  • F. A. Ponce. Compositional instability in InGaN and InAlN thick films. Deutsche Physikalische Gesellschaft, Berlin 12, German Physical Society Meeting (Mar 2012).
  • F. A. Ponce. Study of polarization fields in nitride semiconductors using electron holography in the transmission electron microscope. Seminar at the Paul-Drude-Institut fur Festkorperelektronik (Mar 2012).
  • F. A. Ponce. Polarization fields in AlGaN/GaN superlattices in GaN nanowires. Workshop on Compound Semiconductor Materials and Devices (WOCSEMAD) (Feb 2012).
  • F. A. Ponce. Determination of the electronic band structure of semiconductor heterostructures using electron holography in the TEM. 20th Peruvian Physics Symposium (XX-SPF). Tacna, Peru. 24-29 Sept. 2011 (Sep 2011).
  • F. A. Ponce. Challenges in the effective use and sustainable generation of energy using semiconducting materials. 10th International Scientific Encounter (ECI 2011i). Lima, Peru, 2-5 August 2011 (Aug 2011).
  • F. A. Ponce. Materials challenges for high efficiency light emitting devices. XV Physics Encounter, Universidad Nacional de Ingeniería, Lima, Peru, 1-3 August 2011 (Aug 2011).
  • F. A. Ponce. Microstructure and polarization fields in nitride semiconductors. 17th International Conference on Microscopy of Semiconducting Materials (MSM-17) (Apr 2011).
  • F. A. Ponce. Microstructure and polarization fields in nitride semiconductors. 17th International Conference on Microscopy of Semiconducting Materials (MSM-17) (Apr 2011).
  • F. A. Ponce. Polarization effects in group-III nitride semiconductor heterostructure devices. 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomat (Mar 2011).
  • F. A. Ponce. Polarization effects in group-III nitride semiconductor heterostructure devices. 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomat (Mar 2011).
  • F. A. Ponce. Spontaneous and piezoelectric fields in nitride semiconductors. 47th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2011 (Feb 2011).
  • F. A. Ponce. Spontaneous and piezoelectric fields in nitride semiconductors. 47th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2011 (Feb 2011).
  • F. A. Ponce. Microstructure and piezoelectric fields in InGaN-based LEDs. 15th Conference on Light-Emitting Diodes: Materials Devices and Applications for Solid State Lighti (Jan 2011).
  • R. D. Dupuis, F. A. Ponce, et al. Improvement of efficiency droop by employing InAlN electron blocking layers in III-N visible LEDs grown by metalorganic chemical vapor deposition. 15th Conference on Light-Emitting Diodes: Materials Devices and Applications for Solid State Lighti (Jan 2011).
  • R. D. Dupuis, F. A. Ponce, et al. Improvement of efficiency droop by employing InAlN electron blocking layers in III-N visible LEDs grown by metalorganic chemical vapor deposition. 15th Conference on Light-Emitting Diodes: Materials Devices and Applications for Solid State Lighti (Jan 2011).
  • F. A. Ponce. Microstructure and piezoelectric fields in InGaN-based LEDs. 15th Conference on Light-Emitting Diodes: Materials Devices and Applications for Solid State Lighti (Jan 2011).
  • R. K. Juday and F. A. Ponce. The search for effective p-type material in GaN-based devices. APS 4 Corners Section meeting at the School of Mines in Golden, Colorado (Oct 2010).
  • F. A. Ponce. Electrostatic energy profiling of semiconductors by electron holography. . Symposium Celebrating Manuel Cardona. Santiago de Querétaro, Mexico. 17-21 August 2010 (Aug 2010).
  • F. A. Ponce. Energy-efficient illumination technologies. Workshop on Energy Efficiency. Peruvian Academy of Science and Ministry of Energy and Mines, Lima, (Mar 2010).
  • F. A. Ponce. Lectures on Microscopy of Semiconductor thin films. Microscopía 2010. 24-27 February 2010. Santiago de Cali, Colombia (Feb 2010).
  • F. A. Ponce. Materials challenges for high efficiency InGaN LEDs. 4th International Conf. on LED and Solid State Lighting (LED 2010). 3-5 February 2010. Seoul, Korea (Feb 2010).
  • F. A. Ponce. Lectures on Microscopy of Semiconductor thin films. Microscopía 2010. 24-27 February 2010. Santiago de Cali, Colombia (Feb 2010).
  • F. A. Ponce. Materials challenges for high efficiency InGaN LEDs. 4th International Conf. on LED and Solid State Lighting (LED 2010). 3-5 February 2010. Seoul, Korea (Feb 2010).
  • A. M. Fischer and F. A. Ponce. Optical Properties of Semiconductors: Cathodoluminescence Studies. International Scientific Seminar, 4 January 2010 (Jan 2010).
  • A. M. Fischer and F. A. Ponce. Cathodoluminescence spectroscopy with high spatial and temporal resolution. International Scientific Encounter, Lima, Peru, 5 January 2010 (Jan 2010).
  • F. A. Ponce. Properties of III-N materials for wide band gap devices. Fifth Workshop on Frontiers in Electronics (WOFE-09). 13-16 December 2009. Rincon, Puerto Rico (Dec 2009).
  • Q. Y. Wei, Z. H. Wu, K. W. Sun, and F. A. Ponce. Polarization Effects in 2DEG and 2DHG AlGaN/AlN/GaN Multi-Heterostructures Measured by Electron Holography. Center for Nano Photonicx Review (Nov 2009).
  • A. M. Fischer, Y. U. Huang, R. Juday, and F. A. Ponce. High-Spatial Resolution Cathodoluminescence Study on a M-Plane LED Structure. Center for Nano Photonicx Review (Nov 2009).
  • Y. U. Huang, R. Juday, A. M. Fischer, and F. A. Ponce. The Physics of Solid State Lighting and the Characterization of Semiconductors through Cathodoluminescence. Center for Nano Photonicx Review (Nov 2009).
  • Q. Y. Wei, T. Li, K. W. Sun, and F. A. Ponce. Strain-Induced Polarization and Electrostatic Potential Variation in InGaN/GaN Heterostructure with Arbitrary Crystal Orientation. Center for Nano Photonicx Review (Nov 2009).
  • Z. H. Wu, A. M. Fischer, K. W. Sun, and F. A. Ponce. Structural and Optical Properties of Non-Polar GaN Films. Center for Nano Photonicx Review (Nov 2009).
  • Q. Y. Wei, Z. H. Wu, K. W. Sun, and F. A. Ponce. The Effects of Surface Potential on the Internal Fields of AlGaN Multiple Quantum Wells for Ultraviolet Emission. Center for Nano Photonicx Review (Nov 2009).
  • F. A. Ponce. Materials challenges for InGaN-based green light emitting devices. Materials Science and Engineering Colloquium, Boston University. 30 October 2009. Boston, MA (Oct 2009).
  • F. A. Ponce. Correlation of structural and electronic properties in wide gap semiconductors. Inter-American Congress on Electron Microscopy (CIASEM-2009). 25-28 October 2009, Rosario, Argentin (Oct 2009).
  • F. A. Ponce. Innovation and the wealth of nations. Innovation Workshop, International Conference on Advanced Materials, ICAM-11, Rio de Janeiro, Brazil (Sep 2009).
  • F. A. Ponce. Moderator, International Round Table on Innovation in Advanced Materials. Innovation Workshop, International Conference on Advanced Materials, ICAM-11, Rio de Janeiro, Brazil (Sep 2009).
  • F. A. Ponce. Initial Stages of nanoindentation in cubic semiconductors. Symp. B – Nanometer Scale Mech Prop, Int. Conf. on Adv. Mat., ICAM-11, Rio de Janeiro, Brazil (Sep 2009).
  • F. A. Ponce. Materials challenges for InGaN-based green-light emitting materials. 6th Int. Conf. on Nanostructured Materials and Nanotechnology (NANOTECH 2009). San Carlos, Mexico (Sep 2009).
  • F. A. Ponce. The physics of nitride semiconductors. Nano & Giga Challenges in Electronics, Photonics, and Renewable Energy 2009. Hamilton, ON, Canada (Aug 2009).
  • F. A. Ponce. Where is nanotechnology going?. International Scientific Seminar – Winter 2009. INICTEL-UNI, Lima Peru (Aug 2009).
  • F. A. Ponce. The physics of nitride semiconductors. Nano & Giga Challenges in Electronics, Photonics, and Renewable Energy Symposium and Summer School (Aug 2009).
  • F. A. Ponce. The role of dislocations in nitride semiconductors for light emitting applications. II International Workshop: Relation Microstructure-Properties and Multiscale Modelling of Plasticity (Jun 2009).
  • F. A. Ponce. Materials Challenges in InGaN-based light emitting devices. Japan-Brazil Symposium on Science and Technology. 21-25 June 2008. São Paulo, Brazil (Jun 2009).
  • F. A. Ponce. The role of dislocations in nitride semiconductors for light emitting applications. 2nd Int. Work. on Microstructure-Props & Multiscale Modeling of Plasticity. Fuenteheridos, Spain (Jun 2009).
  • F. A. Ponce. Piezoelectric effects in InGaN-based green light emitting heterostructures. Forchungsseminar von AHE und AFP, Otto von-Guericke University Magdeburg, Germany (Jun 2009).
  • T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Dechprohm, and C. Wetzel. Carrier localization and non-radiative recombination in green emitting InGaN quantum wells. European Materials Research Society (E-MRS) Symp. J, Strassburg, France (Jun 2009).
  • A. M. Fischer, Z. H. Wu, K. W. Sun, Q. Y. Wei, Y. U. Huang, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce. Stacking faults in InGaN quantum wells grown on m-plane GaN. European Materials Research Society (E-MRS) Symp. J, Strassburg, France (Jun 2009).
  • F. A. Ponce. Polarization fields and the internal quantum efficiency of InGaN-based LEDs. 5th Asia-Pacific Workshop on Nitride Semiconductors (APWS-2009), Zhang Jia Jie, Hunan, China (May 2009).
  • F. A. Ponce. Materials challenges for InGaN-based green light emitting devices. Wuhan Optoelectonics Forum, Huazhong Univ. of Science and Technology, Wuhan, China (May 2009).
  • F. A. Ponce. Materials challenges for InGaN-based green light emitting devices. Halbleiter-Nanophotonik Colloquium, Institute for Solid State Physics, Tech. Univ. Berlin, Germany (May 2009).
  • F. A. Ponce. Misfit relaxation in high indium content InGaN alloys. 5th Asia-Pacific Workshop on Nitride Semiconductors (APWS-2009), 24-28 May 2009. Hunan, China (May 2009).
  • Z. H. Wu, A. M. Fischer, and F. A. Ponce. Structural and optical properties of non-polar GaN. 5th Asia-Pacific Workshop on Nitride Semiconductors (APWS-2009), Zhang Jia Jie, Hunan, China (May 2009).
  • F. A. Ponce. Luminescence spectroscopy with high spatial and temporal resolution. International Conference on Spectroscopy and its Applications. 9-13 March 2009, Lima, Peru (Mar 2009).
  • F. A. Ponce. Lectures on electron microscopy and spectroscopy,. 2nd Andean Workshop on Spectroscopy. 2-6 March 2009, Lima, Peru (Mar 2009).
  • F. A. Ponce. Luminescence spectroscopy with high spatial and temporal resolution. International Conference on Spectroscopy and its Applications. Lima, Peru (Mar 2009).
  • F. A. Pone. Matter and Light. Peruvian Academy of Sciences, Member Induction Ceremony, Lima, Peru (Mar 2009).
  • F. A. Ponce. Lectures on electron microscopy and spectroscopy. 2nd Andean Workshop on Spectroscopy. Lima, Peru (Mar 2009).
  • A. Syrkin, , V. Ivantsov, A. Usikov, Z. H. Wu, K. W. Sun, A. M. Fischer, and F. A. Ponce, . InGaN layers grown by hydride vapor phase epitaxy. Fifth International Workshop on Nitride Semiconductors (IWN-5), October 6-10, 2008. Montreaux, Swit (Oct 2008).
  • F. A. Ponce. The physics of solid-state lighting. Physics Colloquium, Texas Tech University. 30 October 2008. Lubbock, Texas (Oct 2008).
  • F. A. Ponce. Nano-structured semiconductors for optoelectronics and microelectronics. 8th School of Condensed Matter Physics (VIII ENFMC). 22-26 September 2008. Pereira, Colombia (Sep 2008).
  • F. A. Ponce. Lectures on microscopy of semiconductor nanostructures. NSF Pan American Advanced Studies Institute (PASI) on Microscopy of Nanostructures. 21-29 Aug 2009 (Aug 2008).
  • F. A. Ponce. Lectures on Lattice polarity and growth of GaN, Strain and piezoelectric fields in InGaN, and Crystal defect structure and growth technology. 2008 Workshop on Wide-band-gap Semiconductor Physics and Devices (WSPD2008). Dalian, China (Aug 2008).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, T. Yokogawa, S. Yoshida. Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire. International Conference on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, (Aug 2008).
  • H. D. Fonseca-Filho, R. Prioli, M. P. Pires, A. S. Lopes, P. L. Souza, and F. A. Ponce, . One-dimensional oriented InAs/InP nanostructure array produced by nanolithography and metalorganic vapor phase epitaxy. International Conference on Organometallic Vapor Phase Epitaxy (IC-MOVPE XIV), 1-6 June 2008, Metz, (Jun 2008).
  • J.-P. Liu, J. H. Ryou, Z. Lochner, J. Limb, D.-W. Yoo, C. Horne, R. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition. International Conference on Organometallic Vapor Phase Epitaxy (IC-MOVPE XIV), 1-6 June 2008, Metz, (Jun 2008).
  • F. A. Ponce. Correlation of structural, electrical, and optical properties of GaN nanostructures. 9th International Conference on Nano-Structured Materials (Nano 2008). 2-6 June 2008. Brazil (Jun 2008).
  • F. A. Ponce. The physics of semiconductor lighting technologies. Physics Colloquium, Universidade Católica do Rio de Janeiro. May 29, 2008, Brazil (May 2008).
  • F. A. Ponce. Polarization fields and the internal quantum efficiency of InGaN visible LEDs. 213th meeting of the Electrochemical Society. Phoenix Convention Center, 19 May 2008. Phoenix, AZ (May 2008).
  • Z. Wu, A. Fischer, and F. A. Ponce. Stacking faults and optical properties of a-plane GaN. 213th Meeting of the Electrochemical Society. Talk #762. 18-22 May 2008. Phoenix, Arizona (May 2008).
  • R. Garcia, A. Thomas, and F. A. Ponce. Growth and characterization of undoped and Mg-doped GaN nano- and micro-columns by chemical vapor deposition. 213th Meeting of the Electrochemical Society. Talk #769. 18-22 May 2008. Phoenix, Arizona (May 2008).
  • Z. Wu, A. M. Fischer, F. A. Ponce, B. Bastek. J. Christen, T. Wernicke, M. Kneissl, and M. Meyers. Structural and Optical Properties of Non-Polar GaN Thin Films. 7th International Symposium on Semiconductor Light Emitting Devices, ISSLED-2008. Phoenix, AZl (May 2008).
  • Z. Wu, A. M. Fischer, F. A. Ponce, Y. Yokogawa, and S. Yoshida. Effects of the Buffer Layer Thickness on the Formation of Basal Plane Stacking Faults in a-Plane GaN Epilayer Grown on r-Sapphire. 7th International Symposium on Semiconductor Light Emitting Devices, ISSLED-2008. Phoenix, AZl (May 2008).
  • Q. Wei1, Z. Wu, T. Li, and F. A. Ponce. Longitudinal and Transverse Piezoelectric Field of InGaN/GaN Heterostructure Grown on Polar, Semi-Polar and Non-Polar GaN Templates. 7th International Symposium on Semiconductor Light Emitting Devices, ISSLED-2008. Phoenix, AZl (May 2008).
  • A. M. Fischer, S. Srinivasan, and F. A. Ponce. Time-Resolved Cathodoluminescence Study on Mg Doped GaNTemplates. 7th International Symposium on Semiconductor Light Emitting Devices, ISSLED-2008. Phoenix, AZl (May 2008).
  • J. Li, R. García, and F. A. Ponce. ZnO Doping by Combustion Synthesis. 7th International Symposium on Semiconductor Light Emitting Devices, ISSLED-2008. Phoenix, AZl (May 2008).
  • S. Srinivasan, M. Stevens, F. A. Ponce, Y. Narukawa, and T. Mukai. Towards solar white light emission from single InGaN quantum wells. Arizona Institute for Nanoelectronics, Kickoff Meeting. Tempe Mission Palms Hotel. 4 April 2008 (Apr 2008).
  • Z. H. Wu, M. Stevens, and F. A. Ponce. Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography. Arizona Institute for Nanoelectronics, Kickoff Meeting. Tempe Mission Palms Hotel. 4 April 2008 (Apr 2008).
  • J. C. Brooksby, J. Mei, F. A. Ponce, H. Omiya, and T. Mukai. Potential fluctuations near threading dislocations in InGaN quantum wells. Arizona Institute for Nanoelectronics, Kickoff Meeting. Tempe Mission Palms Hotel. 4 April 2008 (Apr 2008).
  • J. Mei, R. Liu, S. Srinivasan, and F. A. Ponce. Mechanisms of strain relaxation in InGaN/GaN heteroepitaxial systems. Arizona Institute for Nanoelectronics, Kickoff Meeting. Tempe Mission Palms Hotel. 4 April 2008 (Apr 2008).
  • A. M. Fischer, S. Srinivasan, R. Garcia, F.A. Ponce, S. E. Guaño, B. C. Di Lello, F. J. Moura and I. G. Solorzano. Optical properties of highly luminescent zinc oxide tetrapod powders. Arizona Institute for Nanoelectronics, Kickoff Meeting. Tempe Mission Palms Hotel. 4 April 2008 (Apr 2008).
  • Z. Wu and F. A. Ponce. Structural and optical properties of non-polar GaN thin films. Seventh International Symposium on Semiconductor Light Emitting Devices. April 27-May 2, 2008. Pho (Apr 2008).
  • F. A. Ponce. Strain and piezoelectric fields in InGaN-based light emitting structures. 1st GCOE Intern Symp on Photonics and Electronics Science and Eng. 4 March 2008, Kyoto, Japan (Mar 2008).
  • F. A. Ponce. Internal polarization fields and their effect on nitride semiconductor device characteristics. Conference on Display and Solid State Lighting (DSSL 2008). 31 January 2008. Seoul, Korea (Jan 2008).
  • F. A. Ponce. Recent advances in GaN materials and devices. Int. Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS 2008)). Korea (Jan 2008).
  • F. A. Ponce. The physics of solid state lighting. Physics Colloquium. Physics Department. Utah State University. 13 November 2007. Logan, Utah (Nov 2007).
  • F. A. Ponce. Properties limiting the performance of AlInGaN green lasers. Visible InGaN Injection Lasers (VIGIL) Kickoff Meeting. 5-6 November 2007. Arlington, Virginia (Nov 2007).
  • F. A. Ponce. Science, technology and innovation, in the development of the Cusco Region-the role of the university. Receiving the Tri-Centennial Medal from the National U San Antonio Abad of Cusco. Cusco Peru (Sep 2007).
  • F. A. Ponce. Lattice mismatch and misfit dislocations in hexagonal nitride semiconductors. Ninth Interamerican Congress on Electron Microscopy (CIASEM-9). 24-28 September 2007. Cusco, Peru (Sep 2007).
  • Rafael Garcia; Alan Thomas; Fernando Ponce. Synthesis of Highly Luminescent, Ge-Mg Co-Doped GaN Powders. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Jin Mei; Rong Liu; Sridhar Srinivansan; Fernando Ponce; Hiromasa Omiya; Takeshi Mukai. Plastic Strain Relaxation in Wurtzite InGaN/GaN Heteroepitaxial Systems. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Jin Mei; F. A. Ponce; R. S. Qhalid Fareed; Asif Khan. Dislocation Generation at the Coalescence of Aluminum Nitride Lateral Epitaxy on Shallow-Grooved Sapphire Substrates. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Sridhar Srinivasan; Zhihao Wu; M. Stevens; F. A. Ponce; H. Omiya; T. Mukai. InGaN Quantum Wells on Polar vs. Semipolar GaN Orientations: Internal Fields and Their Effect on Luminescence. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Rafael Garcia; Alan Thomas; Fernando Ponce. Growth of High Purity Un-Doped and Mg-Doped GaN Thick Films by CVD. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Jacob Brooksby; Jin Mei; Fernando Ponce. Direct Correlation of Spectral Luminescence with the Spatial Distribution of Threading Dislocations in Green Light Emitting InGaN Quantum Wells. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Lay Theng Tan; Robert Martin; Kevin O’Donnell; Zhihao Wu; Fernando Ponce; Ian Watson. Optical Properties of Near Lattice-Matched GaN/AlInN Quantum Wells. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • Zhihao Wu; A. Fischer; F. Ponce; W. Lee; J. H. Ryou; J. Limb; D. Yoo; R. Dupuis. Effect of the Internal Electrostatic Potential on the Light Emitting Properties of InGaN Quantum Wells in Green LEDs. 7th International Conference on Nitride Semiconductors, Las Vegas, NV, 17-21 September, 2007 (Sep 2007).
  • F. A. Ponce, S. Guaño, A. M. Fischer, G. Solorzano. Structural and optical crystal properties of ZnO crystals synthesized with controlled size. Brazilian Congress on Electron Microscopy. 27 August 2007. Buzios, Rio de Janeiro, Brazil (Aug 2007).
  • F. A. Ponce. Establishing the correlation at the nanometer scale between the structural and the electronic properties of semiconductors for solid state lighting applications. XXI Congreso da Sociedade Brasileira de Microscopia e Microanálise (CSBMM-2007). Buzios, Brazil (Aug 2007).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, K. Kneissl. Structural and optical properties of non-polar GaN thin films. Int. Conf. on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, Brazil (Jul 2007).
  • C. Muniz da Silva Almeida, R. Prioli, F. A. Ponce. Early stage of mechanical deformation of InP studied by nanoindentation. Int. Conf. on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, Brazil (Jul 2007).
  • Qiyuan Wei, Ti Li, Zhihao Wu, A. M. Fischer, and F. A. Ponce. Strain-induced polarization and electrostatic potential variation in InGaN/GaN heterostructures with arbitrary crystal orientation. Int. Conf. on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, Brazil (Jul 2007).
  • A. M. Fischer, S. Srinivasan, F. A. Ponce. Time-resolved cathodoluminescence study of Mg-doped GaN. Int. Conf. on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, Brazil (Jul 2007).
  • Z. H. Wu, A. M. Fischer, F. A. Ponce, T. Yokogawa, S. Yoshida. The effects of surface potential on the internal fields of AlGaN multiple quantum wells for ultraviolet emission. Int. Conf. on the Physics of Semiconductors, July 28- August 1 2008. Rio de Janeiro, Brazil (Jul 2007).
  • F. A. Ponce. Frontiers of nanotechnology for high-efficiency solid-state lighting. Conference on Technological Innovation and Strategic Areas (CITARE-2007). 11-14 June 2007. Gávea, (Jun 2007).
  • F. A. Ponce. Structural and electronic properties of defects and strained interfaces in nitride semiconductors. Third Asia-Pacific Workshop on Widegap Semiconductors (APWS-2007). 11-14 March 2007. Jeonju, Korea (Mar 2007).
  • F. A. Ponce. Imaging defects and interfaces in semiconductors. The Robert Sinclair Symposium. 16 February 2007. Stanford University, California (Feb 2007).
  • F. A. Ponce. Materials issues affecting the internal quantum efficiency of InGaN-based visible LEDs. First International Conference on Display LEDs (ICDL-2007). 31 January to 2 February 2007. Seoul, (Jan 2007).
  • Fischer, S. E. Guano, I. G. Solórzano, B. C. Di Lello, F. J. Moura, and F. A. Ponce. Polvos de oxido de zinc de alta luminiscencia sintetizados por evaporación y oxidación directa de zinc. International Scientific Encounter (ECI-2007), Lima, Peru, January 2007 (Jan 2007).
  • Ponce, Fernando. Applications of high resolution electron microscopy. 6th Congreso Bi-Nacional de Materiales y Metalurgia (CONAMET-2006) (Dec 2006).
  • Ponce, Fernando. Advances and challenges in nanotechnology. 6th Congreso Bi-Nacional de Materiales y Metalurgia (CONAMET-2006) (Nov 2006).
  • Ponce, Fernando. The physics of solid state lighting. 18th Latin American Symposium on Solid State Physics (Nov 2006).
  • Ponce, Fernando. Lattice relaxation and electronic properties of thick InN epilayers grown on GaN by MOCVD. 3rd International Indium Nitride Workshop (IINW-3) (Nov 2006).
  • Ponce, Fernando. Microstructure of AlN grown by lateral epitaxial overgrowth. International Workshop of Nitride Semiconductors (IWN-2006) (Oct 2006).
  • Ponce, Fernando. Nanoscale properties of InGaN quantum wells for white light generation. Encontro SBPMat 2006 (Brazilian MRS meeting) (Oct 2006).
  • Ponce, Fernando. Properties of semipolar InGaN quantum wells. International Workshop of Nitride Semiconductors (IWN-2006) (Oct 2006).
  • Ponce, Fernando. The human potential in science and technology. International Scientific Encounter (ECI-2006i), Universidad Nacional de Ingenieria (Aug 2006).
  • Ponce, Fernando. Intellectual property and the wealth of nations. National Institute for the Defense of Intellectual Property (Indecopy) (Aug 2006).
  • Ponce, Fernando. Trends and perspectives in nanotechnology. International Scientific Encounter (ECI-2006i), Universidad Nacional de Ingenieria (Aug 2006).
  • Ponce, Fernando. Determination of optical properties with high spatial resolution. Pan American Advance Studies Institute (PASI) on Applications of Transmission Electron Microscopy (Jul 2006).
  • Ponce, Fernando. Electron holography in the TEM. Pan American Advance Studies Institute (PASI) on Applications of Transmission Electron Microscopy (Jul 2006).
  • Ponce, Fernando. High resolution transmission electron microscopy. Pan American Advance Studies Institute (PASI) on Applications of Transmission Electron Microscopy (Jul 2006).
  • Ponce, Fernando. HRTEM of defects and interfaces. Pan American Advance Studies Institute (PASI) on Applications of Transmission Electron Microscopy (Jul 2006).
  • Ponce, Fernando. Microscopic aspect of solid state lighting. Pan American Advance Studies Institute (PASI) on Applications of Transmission Electron Microscopy (Jul 2006).
  • Srinivasan, Sridhar, Ponce, Fernando. Probing the optical properties of III-nitride structures with high spatial resolution. International Symposium on Blue Lasers and Light Emitting Diodes (ISBBLED-2006) (May 2006).
  • Ponce, Fernando. Methods to produce white light via semiconductor radiation. International Scientific Encounter (ECI 2006v), Universidad Nacional de Ingenieria (Jan 2006).
  • Ponce, Fernando. The physics of solid state lighting. 4th Annual Meeting of the Brazilian Materials Research Society (Oct 2005).
  • Ponce, Fernando. The physics of solid state lighting. Conference on Nanostructured Materials and Nanotechnology (Sep 2005).
  • Ponce, Fernando. Influence of Microstructure on the Internal Quantum Efficiency of InGaN-based LEDs. Conference on Nanostructured Materials and Nanotechnology (Sep 2005).
  • Brooksby, J, Srinivasan, S, Mei, J, Ponce, Fernando, Mukai, T. Luminescence of InGaN Quantum Wells on Bulk GaN and Sapphire. Int. Inst. of Adv. Studies for Semiconductor Nano-Structure &Optoelectronic Devices (Aug 2005).
  • Mei, J, Srinivasan, S, Liu, R, Ponce, Fernando, Omiya, H, Narukawa, Y. The influence of stacking faults on the optical properties of GaN. Int. Inst. of Adv. Studies for Semiconductor Nano-Structure &Optoelectronic Devices (Aug 2005).
  • Omiya, H, Ponce, Fernando, Marui, H, Tanaka, S, Mukai, T. Atomic Arrangement at Au/p-GaN Interface in Low Resistance Contacts. Int. Inst. of Adv. Studies for Semiconductor Nano-Structure &Optoelectronic Devices (Aug 2005).
  • Ponce, Fernando. Compositional inhomogeneities in InGaN alloys. 6th International Conference on Nitride Semiconductors (Aug 2005).
  • Ponce, Fernando. The physics of solid state lighting. Int. Inst. of Adv. Studies for Semiconductor Nano-Structure &Optoelectronic Devices (Aug 2005).
  • Ponce, Fernando, Liu, R, Srinivasan, S, Omiya, H, Cherns, D, Narukawa, Y, Mukai, T. Misfit dislocation generation in InGaN epilayers in fres-standing GaN. 6th International Conference on Nitride Semiconductors (Aug 2005).
  • Srinivasan, S, Stevens, M, Ponce, Fernando. Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN planes. 6th International Conference on Nitride Semiconductors (Aug 2005).
  • Ponce, Fernando. Materials for the 21st Century. International Conference on Spectroscopy (May 2005).
  • Ponce, Fernando. Influence of microstructure on the internal quantum efficiency of light emitting devices based on nitride semiconductors. 2005 International Forum on LED and Solid State Lighting (Apr 2005).
  • Ponce, Fernando. Microstructure and the optical properties of AlGaN alloys for UV light emitting devices. Akasaki Research Center International Symposium on New Horizons on Nitride Research (Dec 2004).
  • Liu, R, Ponce, Fernando, Chen, C, Yang, J, Khan, M. Partial Dislocations in Wurtzite Structure GaN. Materials Research Society, 2004 Fall Meeting (Nov 2004).
  • Liu, R, Srinivasan, S, Mei, J, Ponce, Fernando, Mukai, T, Tanaka, S. Generation of Radial Dislocation Arrays at Surface Pits in InGaN/GaN Heterostructures. Materials Research Society, 2004 Fall Meeting (Nov 2004).
  • Liu, R, Srinivasan, S, Mei, J, Ponce, Fernando, Mukai, T, Tanaka, S. Structure of Misfit Dislocations Resulting from Non-Basal Plane Slip in InGaN/GaN Heterostructures. Materials Research Society, 2004 Fall Meeting (Nov 2004).
  • Mei, J, Srinivasan, S, Liu, R, Ponce, Fernando, Mukai, T, Tanaka, S. The Influence of Stacking Faults on the Optical Properties of GaN. Materials Research Society, 2004 Fall Meeting (Nov 2004).
  • Ponce, Fernando. Influence microstructure on the internal quantum efficiency of GaN/InGaN light emitting devices. IQE 100 - Workshop on High Brightness LEDs (Nov 2004).
  • Ponce, Fernando. The physics of semiconductor lighting. Opening Ceremony of the Korean Optoelectronics Technology Institute (KOPTI) (Nov 2004).
  • Ponce, Fernando. Microstructure and the electronic properties of InGaN quantum wells. International Forum on Semiconductor Lighting. The Sixth China Hi-Tech Fair (Oct 2004).
  • Srinivasan, S, Omiya, H, Ponce, Fernando, Tanaka, S, Marui, H, Mukai, T. The electronic nature of metal/p-GaN junctions. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Stevens, M, Bell, A, Freidrich, H, Ponce, Fernando. Study of compositional fluctuations in InGaN QW's by electron tomography and electron holography. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Stevens, M, Bell, A, Heiner, F, Ponce, Fernando. Electrostatic fields and compositional fluctuations in InGaN quantum wells. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Omiya, H, Srinivasan, S, Ponce, Fernando, Tanaka, S, Marui, H, Mukai, T. Atomic arrangement at Au/p-GaN interface in low resistance contacts. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Bell, A, Stevens, M, Ponce, Fernando, Christen, J, Bertram, F, Marui, H, Tanaka, S. Localization versus carrier-screening effects in InGaN quantum wells - a time-resolved cathodoluminescence study. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Cherns, D, Sahonta, L, Liu, R, Ponce, Fernando, Amano, H, Akasaki, I. A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Garcia, R, Bell, A, Ponce, Fernando, Thomas, A. Light emission from GaN micro-crystals. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Liu, R, Bell, A, D'Costa, V, Ponce, Fernando, Chen, C, Yang, J, Khan, M. The nature of defects in a-plane gallium nitride films. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Liu, R, Mei, J, Ponce, Fernando, Narukawa, Y, Tanaka, S. Strain relaxation mechanisms of indium gallium nitride epilayers. 27th International Conference on the Physics of Semiconductors (Jul 2004).
  • Ponce, Fernando. Fields and compositional inhomogeneities in InGaN quantum wells. 4th Int. Workshop on Physics of Light-Matter Coupling in Nitrides (PLMCN-4) (Jun 2004).
  • Ponce, Fernando. Microstructure and the electronic properties of InGaN. 12th International Conference on Metal Organic Vapor Phase Epitaxy (MOVPE XII) (May 2004).
  • Ponce, Fernando. The nature of InGaN quantum wells for visible lighting technologies. International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) (Mar 2004).
  • Ponce, Fernando. The physics and technology of semiconductor lighting. 11th International Scientific Encounter (XI Encuentro Cientifico International) (Jan 2004).
  • Ponce, Fernando. Dislocation morphology evolution in Si-doped AlGaN/GaN multiple-quantum-well. 2003 Materials Research Society Fall Meeting (Dec 2003).
  • Ponce, Fernando. Inversion domain platelets induced by Mg-doping in laterally-grown AlGaN films. 2003 Materials Research Society Fall Meeting (Dec 2003).
  • Ponce, Fernando. Effect of threading dislocation density on microstructure and optical properties of InGaN epilayers. 2003 Materials Research Society Fall Meeting (Dec 2003).
  • Ponce, Fernando. Optical properties of N- and Ga-polarity GaN. 2003 Materials Research Society Fall Meeting (Dec 2003).
  • Ponce, Fernando. Synthesis, structure and luminescence of high brightness gallium nitride powder. 2003 Materials Research Society Fall Meeting (Dec 2003).
  • Ponce, Fernando. The nature of nitride semiconductor epitaxy. 11th Latin American Congress on Surface Science and Applications (Dec 2003).
  • Ponce, Fernando. Selective green or red emission from a new polycrystalline oxide phosphor. Four-corners (Oct 2003).
  • Ponce, Fernando. High efficiency luminescent gallium nitride powders by direct synthesis from gallium metal and ammon. Four-corners (Oct 2003).
  • Ponce, Fernando. Characterization of AlGaN epitaxial layers. Four-corners (Oct 2003).
  • Ponce, Fernando. Dislocation density reduction in AlGaN films deposited by facet-controlled epitaxial lateral overgro. Fifth International Conference on Nitride Semiconductors (May 2003).
  • Ponce, Fernando. Carrier localization in AlGaN. Fifth International Conference on Nitride Semiconductors (May 2003).
  • Ponce, Fernando. Misfit dislocations and plastic relaxation in InGaN epilayers. Fifth International Conference on Nitride Semiconductors (May 2003).
  • Ponce, Fernando. Synthesis and characterization of high luminescence GaN powders. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Early stages of growth and atomic arrangement in GaN epitaxy on ZrB2. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Light emission and microsctructure of Mg-doped AlGaN grown on patterned sapphire. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Measuring the electrostatic potential at dislocations in GaN. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Microstructure of thick InGaN epitaxial layers on sapphire. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Misfit dislocations and plastic relaxation in InGaN epilayers. 2003 Symposium on Recent Developments and Applications of Atomic Resolution Electron Microscopy (Jan 2003).
  • Ponce, Fernando. Influence of microstructure on the internal quantum efficiency of GaN/InGaN LED structures. 4th Meijo International Symposium on Nitride Semiconductors
  • Ponce, Fernando. Misfit dislocation generation mechanisms in InGaN epilayers. 12th Latin American Congress on Surface Science and its Applications
Service
  • Departmen of Physics/ Space Commitee, Chair (2006 - Present)
  • Industrial Affiliates Program, Member of Committee (1999 - Present)
  • 14th Brazilian Materials Research Society Meeting (BMRS-14), Member of the International Advisory Committee (2014 - 2015)
  • 6th Int. Symposium on Growth of Nitride Semiconductors (ISGN-6), Member of the International Advisory Committee (2014 - 2015)
  • 11th International Conference on Nitride Semiconductors (ICNS-11), Co-Chair (2013 - 2015)
  • 11th International Conference on Nitride Semiconductors (ICNS-11), Member of the International Advisory Committee (2013 - 2015)
  • 10th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED-2012), Member of the International Advisory Committee (2013 - 2015)
  • Faculty Search Committee, Aberration Corrected Electron Microscopy, Member (2014 - 2015)
  • 8th International Workshop on Nitride Semiconductors (IWN-2012), Member of the International Advisory Committee (2013 - 2014)
  • 5th Int. Symposium on Growth of Nitride Semiconductors (ISGN-5), Meeting Co-Chair (2012 - 2014)
  • 10th International Conference on Nitride Semiconductors (ICNS-10), Member of the International Advisory Committee (2011 - 2013)
  • 10th International Conference on Nitride Semiconductors (ICNS-10), Member of the International Advisory Committee (2011 - 2013)
  • 4th Int. Symp. on Growth of III-Nitrides (ISGN-4), Member of the International Advisory Committee (2011 - 2013)
  • 9th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED-2012), Chair of the International Advisory Committee (2011 - 2013)
  • Graduate Exam Committee, Member (2011 - 2013)
  • 7th International Workshop on Nitride Semiconductors (IWN-2012), Member of the International Advisory Committee (2011 - 2013)
  • 7th International Workshop on Nitride Semiconductors (IWN-2012), Member of the International Advisory Committee (2011 - 2012)
  • 4th Int. Symp. on Growth of III-Nitrides (ISGN-4), Member of the International Advisory Committee (2011 - 2012)
  • 9th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED-2012), Chair of the International Advisory Committee (2011 - 2012)
  • 9th International Conference on Nitride Semiconductors (ICNS-9), Member of the International Advisory Committee (2010 - 2012)
  • 15th Int. Symp. on the Physics of Semiconductors and Applications (ISPSA-XV)., International Advisory Committee Member (2010 - 2011)
  • Colloquium Committee, member (2009 - 2011)
  • Personnel Committee, Member (2009 - 2011)
  • 38th International Symposium on Compound Semiconductors (ISCS-2011)., Program Committee Member (2010 - 2011)
  • Asian Pacific Workshop on Widegap Semiconductors 2011 (APWS 2011)., Co-chair of the Organizing Committee (2010 - 2011)
  • Conf. on Solar Cells, Solid-State Lighting & Information Display Technol. (SSID)., Program Committee Member (2009 - 2010)
  • 6th International Workshop on Nitride Semiconductors (IWN-6), Member of the International Advisory Committee (2008 - 2010)
  • 6th International Workshop on Nitride Semiconductors (IWN-6), Member International Advisory Committee (2009 - 2010)
  • Int. Conf. on Solar Cells, Solid-State Lighting & Information Display Technol. (SSID), Member of the Program Committee (2009 - 2010)
  • 3rd International Symposium on Growth of III-Nitrides (ISGN3)., International Advisory Committee Member (2009 - 2010)
  • 3rd International Symposium on Growth of III-Nitrides (ISGN3), Member of the International Advisory Committee (2008 - 2010)
  • 8th Int. Symp. on Blue Lasers & Light Emitting Diodes (ISBLLED-2010)., Chair of the International Advisory Committee (2009 - 2010)
  • 8th Int. Symp. on Blue Lasers & Light Emitting Diodes (ISBLLED-2010), Chair of the International Advisory Committee (2008 - 2010)
  • Materials Graduate Program Search, Member (2009 - 2009)
  • Symposium on Frontiers in Photonic and Photovoltaic Materials and Processes, ICAM-2009, Chair (2008 - 2009)
  • 8th International Conference on Nitride Semiconductors (ICNS-8), Member International Advisory Committee (2008 - 2009)
  • 8th International Conference on Nitride Semiconductors (ICNS-8), International Advisory Committee (2007 - 2009)
  • 8th International Conference on Nitride Semiconductors (ICNS-8), Member International Advisory Committee (2008 - 2009)
  • 5th Asia-Pacific Workshop on Nitride Semiconductors (APWS-2009), Co-Chair (2008 - 2009)
  • Symp Frontiers in Photonics & Photovoltaics 11th International Conf. on Advanced Materials, Chair (2008 - 2009)
  • Departmen of Physics/ Space Commitee, Chair (2006 - 2009)
  • International Conference of Advanced Materials, ICAM, Rio de Janeiro, Brazil, Member International Advisory Committee (2006 - 2009)
  • Symposium on Group III Nitride Semiconductors, European Materials Research Society Spring Meeting, Co-Chair (2007 - 2009)
  • Symposium on Nitride Semiconductors, European Materials Research Society Spring Meeting (E-MRS 2009), Co-Chair (2008 - 2009)
  • 2009 Asian Pacific Workshop on Widegap Semiconductors (APWS 2009), China, Co-Chair (2007 - 2009)
  • 2009 Asian Pacific Workshop on Widegap Semiconductors (APWS 2009), China, International Advisory Committee (2007 - 2009)
  • 2nd Andean Workshop on Spectroscopy, International Advisory Committee (2008 - 2009)
  • 2nd Andean Workshop on Spectroscopy, Lima, Peru, International Advisory Committee (2008 - 2009)
  • International Conference on Spectroscopy and its Applications, Member International Advisory Committee (2008 - 2009)
  • International Conference on Spectroscopy and its Applications, Lima, Peru, International Advisory Committee (2008 - 2009)
  • Latin-American Society of Surface Science and Applications (SLACS), Member of Board of Directors (1990 - 2008)
  • 5th International Workshop on Nitride Semiconductors (IWN 2008), Montreaux, Switzerland, Member International Advisory Committee (2007 - 2008)
  • 29th International Conference on Physics of Semiconductors, ICPS-29, Member International Advisory Committee (2006 - 2008)
  • 7th International Symposium on Blue Lasers and Light Emitting Devices (ISBLLED-7), Tempe, Chairman (2004 - 2008)
  • 2nd International Conference on Display and Solid State Lighting (DSSL-2008), Member International Advisory Committee (2007 - 2008)
  • 6th Internl. Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS), Member Intrnational Advisory Committee (2007 - 2008)
  • 13th Latin American Congress on Surface Science & Applications (CLACSA-13), Bogota, Colombia, Organizing Committee (2005 - 2007)
  • 9th Inter-American Congress of Electron Microscopy (CIASEM-2007), Cuzco, Peru, Program Chair (2007 - 2007)
  • 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, Member International Advisory Committee (2004 - 2007)
  • Space Committe, Member (2004 - 2007)
  • 6th Int. Conf. on Nitride Semiconductors, Bremen, Germany, International Advisory Committee (2003 - 2007)
  • Graduate Studies Committee, Member (2002 - 2007)
  • XIV Summer Scientific Encounter, Lima, Peru, Chair International Advisory Committee (2006 - 2007)
  • 2007 Asian Pacific Workshop on Widegap Semiconductors (APWS 2007), Korea, Member International Advisory Committee (2005 - 2007)
  • 2007 Asian Pacific Workshop on Widegap Semiconductors (APWS 2007), Jeonju, Korea, Member International Advisory Committee (2005 - 2007)
  • 1st International Conference on Display LEDs (ICDL 2007), Seoul, Korea, Member International Advisory Committee (2006 - 2007)
  • International Workshop on Nitride Semiconductors (IWN 2006), Member International Advisory Committee (2004 - 2006)
  • XIII Winter Scientific Encounter, Lima, Peru, Chair International Advisory Committee (2006 - 2006)
  • Graduate Studies Committee, Member (2002 - 2006)
  • Sixth International Symp. on Blue Laser and Light-Emitting Diodes, Chair of the International Advisory Committee (2004 - 2006)
  • Sixth International Symp. on Blue Laser and Light-Emitting Diodes, Member of the International Advisory Committee (2004 - 2006)
  • 12th Latin-American Congress on Surface Science and Applications (CLACSA-12), Member of Organizing Committee (2003 - 2005)
  • Pan-American Advanced Studies Institute (PASI) School on Electron Microscopy, Organizing Committee (2004 - 2005)
  • Science and Engineering of Materials, Elected Member Executive Committee (2003 - 2005)
  • Intel International Science and Engineering Fair, Phoenix, Arizona, Co-Chair, Physics (2004 - 2005)
  • School of Materials, Member of the Task Force (2004 - 2005)
  • Fifth International Conference on Low Dimensional Structures and Devices (LDSD 2004), International Advisory Committee (2003 - 2004)
  • Seventeenth Latin-American Symp. on Solid State Physics (SLAFES-XVII), Habana, Cuba, International Advisory Committee (2002 - 2004)
  • Undergraduate Studies Committee, Member (2002 - 2004)
  • 27th International Conference on Physics of Semiconductors, ICPS-27, Chair (2000 - 2004)
  • Fifth International Symp. on Blue Laser and Light-Emitting Diodes, Geongju, Ko, International Advisory Committee (2003 - 2004)
  • 27th International Conference on Physics of Semiconductors, ICPS-27, Chair (2003)
  • 5th Int. Conf. on Nitride Semiconductors, Member of the International Advisory Committee (2003)
  • Budget and Policy Committee, Member (2003)
  • Eleventh Latin-American Congress on Surface Science and Applications (CLACSA-11), Member of Organizing Committee (2003)
  • Fifth International Conference on Low Dimensional Structures and Devices (LDSD 2004), International Advisory Committee (2003)
  • Fifth International Symp. on Blue Laser and Light-Emitting Diodes, Member of the International Advisory Committee (2003)
  • First Asia-Pacific Workshop on Widegap Semiconductors (APWS-2003), Member of the International Advisory Committee (2003)
  • International Symp. on Compound Semiconductors, Member of the International Advisory Committee, Subcommittee for Wide Bandgap Materials (2003)
  • Latin-American Society of Surface Science and Applications (SLACS), Member of Board of Directors (2003)
  • Pan-American Advanced Studies Institute (PASI) Workshop on Physics at the Nanoscale, Chair (2003)
  • Science and Engineering of Materials Executive Committee, Elected Member (2003)
  • Seventeenth Latin-American Symp. on Solid State Physics (SLAFES-XVII), Member of the International Advisory Committee (2003)
  • Undergraduate Studies Committee, Member (2003)