Yuji Zhao received a bachelor’s degree in microelectronics from Fudan University, China, in 2008, and a doctorate in electrical and computer engineering from University of California, Santa Barbara (UCSB) in 2012. Prior to joining Arizona State University in 2014, he was an assistant project scientist in the Materials Department and Solid State Lighting and Energy Center (SSLEC) at UCSB. Zhao has worked extensively on GaN materials and devices, with more than 50 conference and journal publications, one book chapter, and more than 10 patents. He also received the Outstanding Research Award from UCSB for a record four consecutive times (2010 to 2013). His work on GaN LEDs and lasers was recognized with a Most Cited Article of the Year Award from Applied Physics Express, an Editor’s Pick of the Year Award from Applied Physics Letters, a Best Paper Award from CLEO, and was featured in more than 100 international news outlets in five languages, including Science, Nature Photonics, Optical Society of America (OSA), Compound Semiconductors, and Yahoo. Since joining ASU in August 2014, he has received 2015 Bisgrove Scholar Faculty Award and 2015 NASA Early Career Faculty Award.

Zhao's research expertise ranges from electronics and photonics; MOCVD growth and device applications of GaN wide bandgap semiconductors, including LEDs, lasers, solar cells, and power transistors; nanofabrication and nanoscale characterizations; to new physics, materials, devices for future solid-state electronics.