Prof. Yuji Zhao received the B.S. degree in Microelectronics from Fudan University, China in 2008, and the Ph.D degree in Electrical and Computer Engineering from University of California, Santa Barbara (UCSB) in 2012, after Nobel Laureate Professor Shuji Nakamura. Prior to joining ASU in 2014, he was an Assistant Project Scientist in the Materials Department and Solid State Lighting and Energy Center (SSLEC) at UCSB. Since joined ASU in August 2014, Prof. Zhao has received 2019 Presidential Early Award for Scientists and Engineers (PECASE), 2019 MIT TR 35 – China Award, 2017 ASU Fulton Outstanding Assistant Professor Award,  2016 DoD DTRA Young Investigator Award, 2015 NASA Early Career Faculty Award, and 2015 Bisgrove Scholar Career Faculty Award.

Prof. Zhao has worked extensively on III-nitride materials and devices, with more than 150 conference and journal publications, one book chapter, and over 10 patents, and has won Outstanding Research Award from UCSB SSLEC for a record four consecutive times (2010 to 2013). His work on III-nitride LEDs and lasers was recognized with a Most Cited Article of the Year Award from Applied Physics Express, an Editor’s Pick of the Year Award from Applied Physics Letters, a Best Paper Award from CLEO, and was featured in over 100 international news outlets with over 5 languages, including Science, Nature Photonics, Optical Society of America (OSA), Compound Semiconductors, and Yahoo.

Zhao's research expertise ranges from electronics and photonics; MOCVD growth and device applications of GaN wide bandgap semiconductors, including LEDs, lasers, solar cells, and power transistors; nanofabrication and nanoscale characterizations; to new physics, materials, devices for future solid-state electronics.

Please go to Dr. Zhao's group website for more inforation: faculty.engineering.asu.edu/zhao